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NSV40301MZ4T1G

Onsemi

NSV40301MZ4T1G by Onsemi

NSV40301MZ4T1G by Onsemi is a NPN Power BJT with 40V VCE, 3A IC, and small outline package. Ideal for power management applications requiring high collector current and voltage capabilities.

Median Price

$0.242

Lifecycle Status

Suppliers In-Stock

11

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 1,354 parts In-Stock

1+ parts

$0.198

100+ parts

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1,354

$0.198

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Rochester

USA . 31,000 parts In-Stock

1+ parts

-

100+ parts

$0.287

1k+ parts

$0.238

10k+ parts

$0.212

31,000

-

$0.287

$0.238

$0.212

Chip1Stop

Japan . 1,515 parts In-Stock

1+ parts

-

100+ parts

$0.320

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$0.218

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1,515

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$0.320

$0.218

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Verical

USA . 1,354 parts In-Stock

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$0.198

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1,354

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$0.198

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Distributors (In-Stock)

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Digiode

USA . 1,379 parts In-Stock

1+ parts

$0.223

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1,379

$0.223

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Bristol Electronics

USA . 3,660 parts In-Stock

1+ parts

$0.613

100+ parts

$0.227

1k+ parts

$0.159

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3,660

$0.613

$0.227

$0.159

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Chip Stock

USA . 78,000 parts In-Stock

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Flip Electronics

USA . 13,000 parts In-Stock

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Vyrian

USA . 5,476 parts In-Stock

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5,476

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Dan-Mar Components

USA . 3,660 parts In-Stock

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3,660

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ACDS - Activité Composants Distribution Service

France . 1,000 parts In-Stock

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1,000

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Distributors (Availability)

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Component Stockers USA

USA . 66,830 parts In-Stock

1+ parts

$0.080

100+ parts

$0.060

1k+ parts

$0.040

10k+ parts

$0.200

66,830

$0.080

$0.060

$0.040

$0.200

Andel Nordic

Denmark . 4,353 parts In-Stock

1+ parts

$0.090

100+ parts

-

1k+ parts

$0.061

10k+ parts

$0.061

4,353

$0.090

-

$0.061

$0.061

Corohmni

South Africa . 321 parts In-Stock

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$0.179

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321

$0.179

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Corphita

USA . 1,273 parts In-Stock

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$0.212

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1,273

$0.212

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Continental Prestige Electronics

USA . 56,000 parts In-Stock

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$0.280

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56,000

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$0.280

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Authorized Procurement Solutions

USA . 10,000 parts In-Stock

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SupplyDigital Components

Austria . 6,814 parts In-Stock

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6,814

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Kulean Microsystems

USA . 5,503 parts In-Stock

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5,503

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Problanco Electronics

Mexico . 1,795 parts In-Stock

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1,795

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Kepictronics

USA . 1,000 parts In-Stock

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1,000

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iodParts Technologies Inc.

India . 943 parts In-Stock

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943

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UHIMA Technologies

Türkiye . 939 parts In-Stock

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939

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Futuretech Components

Singapore . 900 parts In-Stock

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900

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TANS Electronics

Latvia . 847 parts In-Stock

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847

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Overview

Unleash the power of innovation with the NSV40301MZ4T1G by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-notch quality and reliability in their Power Bipolar Junction Transistors (BJT). This NPN transistor offers maximum Collector-Emitter Voltage of 40V and a Collector Current of 3A, making it perfect for a wide range of applications. From amplifiers to power supplies, this transistor provides exceptional performance and efficiency. Elevate your projects with the NSV40301MZ4T1G and experience the unmatched value and benefits it brings to your designs.

Feature Benefit Bullets

Polarity or Channel Type: NPN

NPN transistors are widely used in amplification and switching applications, making this product versatile and suitable for a variety of electronic projects.

Package Style (Meter): SMALL OUTLINE

The small outline package style makes this transistor compact and space-efficient, ideal for applications where board space is limited.

Maximum Collector-Emitter Voltage: 40 V

With a high maximum collector-emitter voltage, this transistor can handle higher voltage levels, providing flexibility in circuit design.

Maximum Collector Current (IC): 3 A

The high maximum collector current allows this transistor to handle higher current loads, making it suitable for power applications.

Terminal Finish: MATTE TIN

The matte tin terminal finish provides good solderability and corrosion resistance, ensuring reliable connections in the circuit.

Maximum Time At Peak Reflow Temperature (s): 30

The short maximum time at peak reflow temperature simplifies the manufacturing process and reduces the risk of component damage during assembly.

Peak Reflow Temperature °C: 260

The high peak reflow temperature allows for robust solder joints, ensuring dependable performance in a variety of operating conditions.

Technical Specifications

Power Bipolar Junction Transistors (BJT) NSV40301MZ4T1G attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

3 A

Maximum Collector-Emitter Voltage:

40 V

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Terminal Finish:

MATTE TIN

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

NSV40301MZ4T1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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