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NSV40301CTWG

Onsemi

NSV40301CTWG by Onsemi

NSV40301CTWG by Onsemi is a NPN BJT transistor for switching applications. It has a max VCEsat of 0.2V, hFE of 100, and can handle up to 3A collector current. With a small outline package style, it operates b/w -55 °C to 150°C making it suitable for automotive electronics under AEC-Q101 standard.

Median Price

$1.650

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 2,685 parts In-Stock

1+ parts

$1.650

100+ parts

$0.697

1k+ parts

$0.499

10k+ parts

$0.413

2,685

$1.650

$0.697

$0.499

$0.413

DigiKey

USA . 1,902 parts In-Stock

1+ parts

$1.650

100+ parts

$0.696

1k+ parts

$0.499

10k+ parts

-

1,902

$1.650

$0.696

$0.499

-

Flip Electronics (Authorized)

USA . 3,000 parts In-Stock

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-

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3,000

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Distributors (In-Stock)

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Flip Electronics

USA . 12,000 parts In-Stock

1+ parts

-

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12,000

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Digiode

USA . 2,266 parts In-Stock

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2,266

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Vyrian

USA . 1,660 parts In-Stock

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-

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1,660

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Kulean Microsystems

USA . 5,332 parts In-Stock

1+ parts

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5,332

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SupplyDigital Components

Austria . 5,277 parts In-Stock

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5,277

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TANS Electronics

Latvia . 2,342 parts In-Stock

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2,342

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Corphita

USA . 1,063 parts In-Stock

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1,063

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Problanco Electronics

Mexico . 746 parts In-Stock

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746

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UHIMA Technologies

Türkiye . 541 parts In-Stock

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541

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Corohmni

South Africa . 441 parts In-Stock

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441

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Overview

Enhance the performance of your electronic devices with the NSV40301CTWG by Onsemi, a top-quality Power Bipolar Junction Transistor designed for switching applications. Manufactured by Onsemi, a trusted name in the industry, this NPN transistor offers reliability and efficiency. With a maximum VCEsat of 0.2V and a minimum DC current gain of 100, this transistor provides excellent power dissipation and performance. Its small outline package shape and gull wing terminal form make it ideal for surface mount applications. Upgrade your devices with the NSV40301CTWG and experience enhanced functionality and durability like never before.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the transistor, making it durable and reliable for various applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used and have high efficiency in amplification and switching circuits.

Configuration: SINGLE

Simplifies circuit design and offers ease of use in applications where only one transistor is needed.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring optimal performance and efficiency.

Surface Mount: YES

Allows for easy and compact PCB assembly, saving space and enabling high-density designs.

Maximum VCEsat: 0.2 V

Low VCEsat minimizes power loss and improves efficiency in switching operations.

Package Shape: RECTANGULAR

Rectangular shape makes it convenient for PCB layout and integration in various electronic devices.

Terminal Form: GULL WING

Gull wing terminals provide mechanical stability and ease of soldering during assembly.

No. of Terminals: 4

Simple 4-terminal configuration for easy connection and integration into circuits.

Maximum Power Dissipation (Abs): 2 W

Can handle high power levels, making it suitable for demanding applications.

Package Style (Meter): SMALL OUTLINE

Compact size for space-constrained applications and compatibility with modern electronics.

Minimum DC Current Gain (hFE): 100

High DC current gain ensures reliable amplification and switching performance.

Maximum Operating Temperature: 150 °C

Wide temperature range allows for operation in harsh environments without performance degradation.

Maximum Collector-Base Capacitance: 25 pF

Low capacitance minimizes signal distortion and improves high-frequency performance.

Maximum Collector-Emitter Voltage: 40 V

Sufficient voltage rating for various applications, ensuring safe operation.

Transistor Element Material: SILICON

Silicon material offers high performance, reliability, and efficiency in transistor operation.

Minimum Operating Temperature: -55 °C

Wide temperature range allows for operation in extreme cold conditions without loss of performance.

Maximum Collector Current (IC): 3 A

High collector current rating for handling heavy load currents in switching applications.

Terminal Finish: MATTE TIN

Matte tin finish provides good solderability and enhances long-term reliability.

Terminal Position: SINGLE

Single terminal position simplifies installation and connection in circuits.

Case Connection: COLLECTOR

Collector case connection design for efficient heat dissipation and improved thermal performance.

Maximum Time At Peak Reflow Temperature (s): 30

Ensures proper soldering and reliability during assembly processes.

Peak Reflow Temperature °C: 260

Suitable temperature for reflow soldering, ensuring proper bonding and solder joint quality.

Reference Standard: AEC-Q101

Compliance with automotive-grade quality standards, ensuring high reliability and performance in automotive applications.

Nominal Transition Frequency (fT): 215 MHz

High transition frequency for fast switching speeds and high-frequency operation in electronic circuits.

Technical Specifications

Power Bipolar Junction Transistors (BJT) NSV40301CTWG attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

3 A

Maximum Collector-Base Capacitance:

25 pF

Maximum Collector-Emitter Voltage:

40 V

Configuration:

Minimum DC Current Gain (hFE):

100

JESD-30 Code:

R-PSSO-G4

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

2 W

Reference Standard:

AEC-Q101

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.2 V

Trade Compliance

NSV40301CTWG Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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