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NJVMJB41CT4G

Onsemi

NJVMJB41CT4G by Onsemi

NJVMJB41CT4G by Onsemi is a NPN BJT transistor with 100V VCEO, 6A IC, and 65W Ptot. Ideal for switching applications in automotive electronics due to AEC-Q101 compliance and high operating temperature range of -65°C to 150°C. Package style is small outline with gull wing terminals for surface mount assembly.

Median Price

$1.120

Lifecycle Status

Suppliers In-Stock

14

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Farnell

UK . 257 parts In-Stock

1+ parts

$1.120

100+ parts

$0.638

1k+ parts

$0.625

10k+ parts

-

257

$1.120

$0.638

$0.625

-

Mouser Electronics

USA . 301 parts In-Stock

1+ parts

$2.010

100+ parts

$0.863

1k+ parts

$0.558

10k+ parts

$0.506

301

$2.010

$0.863

$0.558

$0.506

Element14

Singapore . 257 parts In-Stock

1+ parts

$2.550

100+ parts

$1.190

1k+ parts

$1.170

10k+ parts

-

257

$2.550

$1.190

$1.170

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Chip1Stop

Japan . 191 parts In-Stock

1+ parts

$3.950

100+ parts

$1.640

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-

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191

$3.950

$1.640

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Rochester

USA . 2,621,753 parts In-Stock

1+ parts

-

100+ parts

$0.663

1k+ parts

$0.550

10k+ parts

$0.490

2,621,753

-

$0.663

$0.550

$0.490

Verical

USA . 1,020,690 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.688

10k+ parts

$0.613

1,020,690

-

-

$0.688

$0.613

DigiKey

USA . 56,950 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.830

10k+ parts

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56,950

-

-

$0.830

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,194 parts In-Stock

1+ parts

$0.515

100+ parts

-

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2,194

$0.515

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Chip Stock

USA . 114,600 parts In-Stock

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114,600

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DigiKey Marketplace

USA . 57,600 parts In-Stock

1+ parts

-

100+ parts

$0.560

1k+ parts

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57,600

-

$0.560

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Vyrian

USA . 6,152 parts In-Stock

1+ parts

-

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6,152

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Sensible Micro Corp

USA . 983 parts In-Stock

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983

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Flip Electronics

USA . 800 parts In-Stock

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800

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Nova Conductors

Japan . 51 parts In-Stock

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51

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 388,807 parts In-Stock

1+ parts

$0.461

100+ parts

-

1k+ parts

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10k+ parts

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388,807

$0.461

-

-

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Semicontronic

India . 388,797 parts In-Stock

1+ parts

$0.461

100+ parts

$0.449

1k+ parts

$0.447

10k+ parts

-

388,797

$0.461

$0.449

$0.447

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Corphita

USA . 2,222 parts In-Stock

1+ parts

$0.488

100+ parts

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2,222

$0.488

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Corohmni

South Africa . 182 parts In-Stock

1+ parts

$0.542

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182

$0.542

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Microchip USA

USA . 2,675 parts In-Stock

1+ parts

$3.380

100+ parts

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2,675

$3.380

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Continental Prestige Electronics

USA . 57,600 parts In-Stock

1+ parts

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100+ parts

$0.650

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57,600

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$0.650

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Perfect Parts

USA . 44,708 parts In-Stock

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44,708

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Authorized Procurement Solutions

USA . 15,000 parts In-Stock

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Problanco Electronics

Mexico . 4,902 parts In-Stock

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4,902

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TANS Electronics

Latvia . 4,450 parts In-Stock

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4,450

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SupplyDigital Components

Austria . 4,392 parts In-Stock

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Kepictronics

USA . 4,374 parts In-Stock

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4,374

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Argo Parts USA

USA . 1,370 parts In-Stock

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Aranea Global

USA . 500 parts In-Stock

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500

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Lixinc

USA . 326 parts In-Stock

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326

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GreenTree Electronics

Israel . 296 parts In-Stock

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296

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Kulean Microsystems

USA . 263 parts In-Stock

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263

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UHIMA Technologies

Türkiye . 255 parts In-Stock

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255

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Overview

Enhance your power management solutions with the NJVMJB41CT4G by Onsemi. Crafted with precision and expertise, this Power BJT transistor offers unparalleled performance for switching applications. With a maximum collector-emitter voltage of 100V and a maximum operating temperature of 150°C, this NPN transistor ensures reliable operation in various conditions. Its small outline package and gull wing terminal form make it ideal for surface mount applications, providing convenience and efficiency. Trust Onsemi's reputation for quality and innovation, and experience the value and benefits that this transistor brings to your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the transistor, making it suitable for various environmental conditions.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching applications, offering good performance characteristics.

Configuration: SINGLE

Single configuration simplifies the circuit design and makes the transistor easy to integrate into electronic systems.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor ensures efficient and reliable operation in such scenarios.

Surface Mount: YES

Surface mount capability allows for easy and space-efficient assembly onto printed circuit boards.

Maximum Power Dissipation (Abs): 65 W

With a high power dissipation capability, this transistor can handle demanding applications without overheating.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space and enables the design of compact electronic devices.

Maximum Collector-Emitter Voltage: 100 V

The high collector-emitter voltage rating provides versatility and ensures compatibility with a wide range of circuit configurations.

Nominal Transition Frequency (fT): 3 MHz

The high transition frequency allows for fast switching speeds, enhancing the overall performance of the transistor in high-frequency applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) NJVMJB41CT4G attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

6 A

Maximum Collector-Emitter Voltage:

100 V

Configuration:

Minimum DC Current Gain (hFE):

15

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Reference Standard:

AEC-Q101

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

NJVMJB41CT4G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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