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2SB1203S-TL-H

Onsemi

2SB1203S-TL-H by Onsemi

The Onsemi 2SB1203S-TL-H is a NPN Power BJT for switching applications. Features include VCEsat of 0.4V, IC of 5A, and hFE of 35. With a max operating temperature of 150°C, it's ideal for high-power switching circuits in various electronic devices.

Median Price

$0.499

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 4,200 parts In-Stock

1+ parts

-

100+ parts

$0.481

1k+ parts

$0.400

10k+ parts

$0.356

4,200

-

$0.481

$0.400

$0.356

DigiKey

USA . 4,200 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.600

10k+ parts

-

4,200

-

-

$0.600

-

Verical

USA . 4,200 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.499

10k+ parts

$0.445

4,200

-

-

$0.499

$0.445

Flip Electronics (Authorized)

USA . 700 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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700

-

-

-

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 389 parts In-Stock

1+ parts

$0.370

100+ parts

-

1k+ parts

-

10k+ parts

-

389

$0.370

-

-

-

Bristol Electronics

USA . 692 parts In-Stock

1+ parts

$0.938

100+ parts

$0.347

1k+ parts

$0.263

10k+ parts

-

692

$0.938

$0.347

$0.263

-

Chip Stock

USA . 27,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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27,000

-

-

-

-

Vyrian

USA . 4,990 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,990

-

-

-

-

Flip Electronics

USA . 700 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

700

-

-

-

-

Dan-Mar Components

USA . 692 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

692

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 2,992 parts In-Stock

1+ parts

$0.265

100+ parts

-

1k+ parts

-

10k+ parts

-

2,992

$0.265

-

-

-

Corohmni

South Africa . 305 parts In-Stock

1+ parts

$0.312

100+ parts

-

1k+ parts

-

10k+ parts

-

305

$0.312

-

-

-

Corphita

USA . 1,401 parts In-Stock

1+ parts

$0.351

100+ parts

-

1k+ parts

-

10k+ parts

-

1,401

$0.351

-

-

-

Component Stockers USA

USA . 4,491 parts In-Stock

1+ parts

$0.400

100+ parts

$0.380

1k+ parts

$0.340

10k+ parts

-

4,491

$0.400

$0.380

$0.340

-

Native Components

USA . 881 parts In-Stock

1+ parts

$0.424

100+ parts

-

1k+ parts

-

10k+ parts

$0.407

881

$0.424

-

-

$0.407

Northwest PG Solutions

USA . 722 parts In-Stock

1+ parts

$0.467

100+ parts

-

1k+ parts

-

10k+ parts

$0.412

722

$0.467

-

-

$0.412

AZTECH Wire

Italy . 209 parts In-Stock

1+ parts

$10.390

100+ parts

-

1k+ parts

-

10k+ parts

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209

$10.390

-

-

-

Problanco Electronics

Mexico . 8,209 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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8,209

-

-

-

-

TANS Electronics

Latvia . 6,948 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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6,948

-

-

-

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SupplyDigital Components

Austria . 5,940 parts In-Stock

1+ parts

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100+ parts

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5,940

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Continental Prestige Electronics

USA . 4,200 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.324

10k+ parts

-

4,200

-

-

$0.324

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Kulean Microsystems

USA . 1,372 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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1,372

-

-

-

-

UHIMA Technologies

Türkiye . 422 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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422

-

-

-

-

Overview

Unleash the power of innovation with the Onsemi 2SB1203S-TL-H Power Bipolar Junction Transistor! Manufactured by industry leader Onsemi, this NPN transistor is designed for high-performance switching applications. With a maximum VCEsat of 0.4V and a DC current gain of 35, this transistor offers unparalleled efficiency and reliability. Whether you're working on automotive, industrial, or consumer electronics projects, this transistor's small outline package and high collector current make it the perfect choice. Elevate your designs with the Onsemi 2SB1203S-TL-H and experience the difference in performance and quality that only Onsemi can deliver.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching applications, offering versatility in circuit design.

Configuration: SINGLE

Simplified design with single configuration for ease of use and integration.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient and reliable performance.

Surface Mount: YES

Enables easy and secure mounting on PCBs, saving space and allowing for automated assembly.

Maximum VCEsat: 0.4 V

Low VCEsat minimizes power loss and improves efficiency in switching operations.

Package Shape: RECTANGULAR

Rectangular shape facilitates easy placement and alignment on circuit boards.

Terminal Form: GULL WING

Gull wing terminals provide strong mechanical support and reliable connections during operation.

Maximum Power Dissipation (Abs): 20 W

High power dissipation capability allows for handling of heavy loads and ensures long-term reliability.

Package Style (Meter): SMALL OUTLINE

Small outline package saves space and is suitable for compact designs.

Maximum Power Dissipation Ambient: 1 W

Efficient power dissipation in ambient conditions helps in maintaining stable operation.

Minimum DC Current Gain (hFE): 35

Good DC current gain ensures proper amplification and signal control.

Maximum Operating Temperature: 150 °C

Can operate at high temperatures without compromising performance, suitable for various environments.

Maximum Collector-Base Capacitance: 40 pF

Low capacitance enables faster switching speeds and reduces signal distortion.

Maximum Collector-Emitter Voltage: 50 V

Sufficient collector-emitter voltage rating for a wide range of applications.

Transistor Element Material: SILICON

Silicon-based transistor for reliable and consistent performance in various operating conditions.

Maximum Collector Current (IC): 5 A

High collector current rating allows for handling of larger currents and loads.

Terminal Finish: TIN BISMUTH

Tin bismuth terminal finish provides reliable solder connections and resistance to oxidation.

Terminal Position: SINGLE

Single terminal position simplifies PCB layout and connection requirements.

Case Connection: COLLECTOR

Collector case connection allows for efficient heat dissipation and electrical connection.

Nominal Transition Frequency (fT): 180 MHz

High transition frequency for fast switching and response times in high-frequency applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) 2SB1203S-TL-H attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

5 A

Maximum Collector-Base Capacitance:

40 pF

Maximum Collector-Emitter Voltage:

50 V

Configuration:

Minimum DC Current Gain (hFE):

35

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e6

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

NPN

Maximum Power Dissipation Ambient:

1 W

Maximum Power Dissipation (Abs):

Surface Mount:

YES

Terminal Finish:

TIN BISMUTH

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.4 V

Trade Compliance

2SB1203S-TL-H Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.75

SB

8541.29.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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