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2SB1168S

Onsemi

2SB1168S by Onsemi

The Onsemi 2SB1168S is a PNP Power BJT with max. VCE of 100V and IC of 4A. With hFE of 140, it's ideal for switching applications at a frequency of 130MHz. This transistor comes in a plastic/epoxy package with through-hole terminals for easy mounting.

Median Price

$0.521

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 17,267 parts In-Stock

1+ parts

-

100+ parts

$0.502

1k+ parts

$0.417

10k+ parts

$0.371

17,267

-

$0.502

$0.417

$0.371

DigiKey

USA . 17,267 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.630

10k+ parts

-

17,267

-

-

$0.630

-

Verical

USA . 17,267 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.521

10k+ parts

$0.464

17,267

-

-

$0.521

$0.464

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 1,899 parts In-Stock

1+ parts

$0.341

100+ parts

-

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-

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1,899

$0.341

-

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Digiode

USA . 2,336 parts In-Stock

1+ parts

$0.391

100+ parts

-

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-

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2,336

$0.391

-

-

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Fibra_Brandt Electronic GMBH

Germany . 5 parts In-Stock

1+ parts

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5

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Distributors (Availability)

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Corohmni

South Africa . 107 parts In-Stock

1+ parts

$0.341

100+ parts

-

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107

$0.341

-

-

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Corphita

USA . 2,386 parts In-Stock

1+ parts

$0.371

100+ parts

-

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2,386

$0.371

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-

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Native Components

USA . 48 parts In-Stock

1+ parts

$0.447

100+ parts

-

1k+ parts

-

10k+ parts

$0.429

48

$0.447

-

-

$0.429

Northwest PG Solutions

USA . 1,278 parts In-Stock

1+ parts

$0.492

100+ parts

-

1k+ parts

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$0.434

1,278

$0.492

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-

$0.434

Continental Prestige Electronics

USA . 17,267 parts In-Stock

1+ parts

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100+ parts

$0.341

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17,267

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$0.341

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QUARKTWIN TECHNOLOGY LTD

USA . 9,804 parts In-Stock

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9,804

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Problanco Electronics

Mexico . 7,033 parts In-Stock

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7,033

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TANS Electronics

Latvia . 4,279 parts In-Stock

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4,279

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Kulean Microsystems

USA . 2,157 parts In-Stock

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2,157

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SupplyDigital Components

Austria . 512 parts In-Stock

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512

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UHIMA Technologies

Türkiye . 123 parts In-Stock

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123

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Overview

Unleash the power of innovation with the Onsemi 2SB1168S Power Bipolar Junction Transistor. Crafted with quality materials and cutting-edge technology by Onsemi, this PNP transistor is a game-changer in the world of switching applications. With a maximum collector-emitter voltage of 100V and a nominal transition frequency of 130 MHz, this transistor offers unparalleled performance and reliability. Whether you're looking to improve efficiency in your electronics projects or enhance the performance of your devices, the 2SB1168S has got you covered. Upgrade to Onsemi and experience the difference today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type: PNP

PNP transistors are commonly used in switching circuits, allowing for efficient control of power flow.

Configuration: SINGLE

Simplifies circuit design as only one transistor is needed for operation.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring reliable performance in such scenarios.

Package Shape: RECTANGULAR

Rectangular shape allows for easy mounting and integration into different electronic systems.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide secure connections and ease of soldering during installation.

No. of Terminals: 3

Simple and straightforward terminal configuration for easy connectivity in circuits.

Package Style (Meter): FLANGE MOUNT

Flange mount package style allows for secure mounting onto surfaces or heat sinks, enhancing thermal performance.

Minimum DC Current Gain (hFE): 140

High minimum DC current gain ensures consistent and stable amplification of current in the circuit.

Maximum Collector-Emitter Voltage: 100 V

Provides a high voltage rating for reliable operation in circuits with varying voltage levels.

Transistor Element Material: SILICON

Silicon transistors are known for their reliability, durability, and optimal electrical properties.

Maximum Collector Current (IC): 4 A

High collector current rating allows for the handling of larger currents, making it suitable for power applications.

Terminal Finish: Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)

Durable terminal finish ensures good conductivity and long-term reliability of connections.

Terminal Position: SINGLE

Single terminal position simplifies circuit layout and enhances ease of installation.

Nominal Transition Frequency (fT): 130 MHz

High transition frequency allows for high-speed switching, making it suitable for fast response applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) 2SB1168S attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

4 A

Maximum Collector-Emitter Voltage:

100 V

Configuration:

Minimum DC Current Gain (hFE):

140

JEDEC-95 Code:

TO-126

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

PNP

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2SB1168S Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.75

SB

8541.29.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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