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2SB1140T

Onsemi

2SB1140T by Onsemi

The Onsemi 2SB1140T is a PNP Power BJT with max. Vce of 20V and max. Ic of 5A, ideal for switching applications. Featuring hFE of 200 and fT of 320MHz, it comes in a plastic/epoxy package with through-hole terminals for easy mounting. Perfect for isolated case connections in various electronic circuits.

Median Price

$0.238

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 8,800 parts In-Stock

1+ parts

-

100+ parts

$0.238

1k+ parts

$0.197

10k+ parts

$0.176

8,800

-

$0.238

$0.197

$0.176

DigiKey

USA . 8,800 parts In-Stock

1+ parts

-

100+ parts

-

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$0.300

8,800

-

-

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$0.300

Verical

USA . 8,800 parts In-Stock

1+ parts

-

100+ parts

-

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$0.220

8,800

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$0.220

Distributors (In-Stock)

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Vyrian

USA . 855 parts In-Stock

1+ parts

$0.159

100+ parts

-

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855

$0.159

-

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Digiode

USA . 1,506 parts In-Stock

1+ parts

$0.185

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1,506

$0.185

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DigiKey Marketplace

USA . 8,800 parts In-Stock

1+ parts

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8,800

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Prism Electronics

USA . 5 parts In-Stock

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5

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Distributors (Availability)

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Native Components

USA . 669 parts In-Stock

1+ parts

$0.123

100+ parts

-

1k+ parts

-

10k+ parts

$0.118

669

$0.123

-

-

$0.118

Northwest PG Solutions

USA . 2,208 parts In-Stock

1+ parts

$0.135

100+ parts

-

1k+ parts

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$0.119

2,208

$0.135

-

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$0.119

Corohmni

South Africa . 60 parts In-Stock

1+ parts

$0.159

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60

$0.159

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Corphita

USA . 900 parts In-Stock

1+ parts

$0.176

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900

$0.176

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QUARKTWIN TECHNOLOGY LTD

USA . 23,143 parts In-Stock

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Continental Prestige Electronics

USA . 8,800 parts In-Stock

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$0.159

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8,800

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$0.159

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Kulean Microsystems

USA . 8,314 parts In-Stock

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8,314

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SupplyDigital Components

Austria . 6,358 parts In-Stock

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6,358

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TANS Electronics

Latvia . 6,018 parts In-Stock

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6,018

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Problanco Electronics

Mexico . 5,535 parts In-Stock

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5,535

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UHIMA Technologies

Türkiye . 672 parts In-Stock

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672

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Perfect Parts

USA . 6 parts In-Stock

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Overview

Discover the power and reliability of the Onsemi 2SB1140T Power Bipolar Junction Transistor. Known for their high-quality components, Onsemi delivers a product that exceeds expectations in switching applications. With a maximum collector-emitter voltage of 20V and a maximum collector current of 5A, this PNP transistor offers exceptional performance. Whether you're looking to optimize your electronic projects or enhance your industrial applications, the 2SB1140T provides the value and benefits you need. Trust Onsemi for superior products that deliver results.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the transistor, ensuring durability and reliability in various environments.

Polarity or Channel Type: PNP

Enables the transistor to operate in a positive to negative current flow, suitable for many circuit designs.

Configuration: SINGLE

Simplified circuit integration and management, making it easier to implement in different applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient and responsive performance in turning on and off currents.

Terminal Form: THROUGH-HOLE

Allows for easy and secure mounting on PCBs or other electronic devices, facilitating assembly and maintenance.

No. of Terminals: 3

Simple and straightforward connection setup, reducing the chances of errors during installation.

Maximum Collector-Emitter Voltage: 20 V

Offers a high voltage handling capability, making it suitable for applications requiring higher voltage levels.

Maximum Collector Current (IC): 5 A

Can handle high currents without overheating, ensuring reliable performance in demanding conditions.

Nominal Transition Frequency (fT): 320 MHz

High frequency operation capabilities, ideal for fast switching applications or high-frequency circuits.

Technical Specifications

Power Bipolar Junction Transistors (BJT) 2SB1140T attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

5 A

Maximum Collector-Emitter Voltage:

20 V

Configuration:

Minimum DC Current Gain (hFE):

200

JEDEC-95 Code:

TO-126

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

PNP

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2SB1140T Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.75

SB

8541.29.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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