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2SB1149-M

Nec Electronics

2SB1149-M by Nec Electronics

PNP; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Collector Current (IC): 3 A; Package Shape: RECTANGULAR; JESD-30 Code: R-PSFM-T3;

Median Price

-

Lifecycle Status

Suppliers In-Stock

0

In-Stock Inventory

< 1k

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 220 parts In-Stock

1+ parts

$1.712

100+ parts

-

1k+ parts

-

10k+ parts

-

220

$1.712

-

-

-

Northwest PG Solutions

USA . 1,503 parts In-Stock

1+ parts

$1.884

100+ parts

-

1k+ parts

-

10k+ parts

-

1,503

$1.884

-

-

-

Technical Specifications

Power Bipolar Junction Transistors (BJT) 2SB1149-M attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Nec Electronics

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

3 A

Maximum Collector-Emitter Voltage:

100 V

Minimum DC Current Gain (hFE):

2000

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

PNP

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

2SB1149-M Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

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