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2SB1142R

Onsemi

2SB1142R by Onsemi

The Onsemi 2SB1142R is a PNP BJT transistor with max. collector-emitter voltage of 50V and max. collector current of 2.5A, ideal for switching applications. Featuring a min DC current gain of 100 and nominal transition frequency of 140MHz, it comes in a plastic/epoxy package style with through-hole terminals for flange mount installation.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 1,174 parts In-Stock

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Digiode

USA . 103 parts In-Stock

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Native Components

USA . 502 parts In-Stock

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$0.124

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$0.119

502

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$0.119

Northwest PG Solutions

USA . 1,789 parts In-Stock

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$0.137

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Metaverse IC Inc.

Canada . 50,000 parts In-Stock

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TANS Electronics

Latvia . 5,495 parts In-Stock

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SupplyDigital Components

Austria . 5,390 parts In-Stock

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Kulean Microsystems

USA . 4,924 parts In-Stock

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Problanco Electronics

Mexico . 3,870 parts In-Stock

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Corphita

USA . 1,212 parts In-Stock

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UHIMA Technologies

Türkiye . 688 parts In-Stock

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Corohmni

South Africa . 159 parts In-Stock

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Overview

Unleash the power of innovation with the 2SB1142R by Onsemi. As a leading manufacturer in the industry, Onsemi guarantees top-notch quality and reliability. This PNP Power Bipolar Junction Transistor is perfect for switching applications, offering a maximum collector-emitter voltage of 50V and a maximum collector current of 2.5A. With a minimum DC current gain of 100, this transistor ensures optimal performance. Upgrade your projects with the 2SB1142R and experience efficiency like never before.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the transistor, making it durable and reliable for various applications.

Polarity or Channel Type: PNP

Suitable for applications where PNP transistors are required for proper circuit operation.

Configuration: SINGLE

Simplifies circuit design and makes it easier to implement in various electronic systems.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient and reliable performance.

Package Shape: RECTANGULAR

Compact and space-saving design for easier integration into electronic circuits.

Terminal Form: THROUGH-HOLE

Allows for easy and secure soldering onto PCBs, ensuring a stable connection.

Minimum DC Current Gain (hFE): 100

High gain value ensures accurate and stable amplification of input signals in a circuit.

Maximum Collector-Emitter Voltage: 50 V

Can withstand high voltage levels, making it suitable for a wide range of applications.

Transistor Element Material: SILICON

Silicon transistors offer higher performance and reliability compared to other materials.

Maximum Collector Current (IC): 2.5 A

Can handle high current levels, making it suitable for power applications.

Terminal Finish: TIN SILVER COPPER NICKEL

Provides excellent conductivity and corrosion resistance for long-lasting performance.

Terminal Position: SINGLE

Simplified pin configuration for easier installation and connection in circuits.

Case Connection: ISOLATED

Prevents electrical interference and ensures stable operation in various circuit configurations.

Nominal Transition Frequency (fT): 140 MHz

High transition frequency allows for fast switching speeds, ideal for high-frequency applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) 2SB1142R attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Configuration:

Minimum DC Current Gain (hFE):

100

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e2

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

PNP

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN SILVER COPPER NICKEL

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2SB1142R Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.75

SB

8541.29.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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