Loading...

2SB1142T

Onsemi

2SB1142T by Onsemi

The Onsemi 2SB1142T is a PNP BJT transistor with max. collector-emitter voltage of 50V and max. collector current of 2.5A, ideal for switching applications. Featuring a min DC current gain of 200 and fT of 140MHz, it comes in a plastic/epoxy package with through-hole terminals for flange mount style usage.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 523 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

523

-

-

-

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,619 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,619

-

-

-

-

Digiode

USA . 835 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

835

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

SupplyDigital Components

Austria . 5,630 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,630

-

-

-

-

TANS Electronics

Latvia . 4,709 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,709

-

-

-

-

Problanco Electronics

Mexico . 3,382 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,382

-

-

-

-

Kulean Microsystems

USA . 1,070 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,070

-

-

-

-

UHIMA Technologies

Türkiye . 676 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

676

-

-

-

-

Northwest PG Solutions

USA . 499 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

499

-

-

-

-

Native Components

USA . 362 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

362

-

-

-

-

Corohmni

South Africa . 139 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

139

-

-

-

-

Corphita

USA . 67 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

67

-

-

-

-

Overview

Unleash the power of innovation with the 2SB1142T by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-notch quality and reliability in every product. This Power BJT offers high performance in switching applications, making it an essential component for your projects. With a maximum collector-emitter voltage of 50V and a nominal transition frequency of 140MHz, this PNP transistor provides unmatched value and efficiency. Trust Onsemi to provide you with the tools you need to succeed.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material makes the transistor lightweight and durable, making it easy to handle and resistant to physical damage.

Polarity or Channel Type: PNP

PNP transistors are commonly used in high power applications, making this transistor suitable for switching tasks that require higher current capabilities.

Configuration: SINGLE

A single configuration simplifies circuit design and implementation, making it easier to integrate this transistor into various electronic systems.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor offers reliable performance and efficiency in controlling power flow.

Package Shape: RECTANGULAR

The rectangular shape allows for easy mounting and placement on circuit boards, optimizing space utilization and overall design efficiency.

Terminal Form: THROUGH-HOLE

Through-hole terminals offer secure connections and easy soldering, ensuring reliable electrical contact and stability in the circuit.

No. of Terminals: 3

With three terminals, this transistor provides necessary connections for input, output, and biasing, enabling proper functionality in a circuit.

Package Style (Meter): FLANGE MOUNT

The flange mount style allows for secure attachment to surfaces or heat sinks, enhancing thermal management and overall performance.

Minimum DC Current Gain (hFE): 200

A high minimum DC current gain ensures stable amplification and signal control, making this transistor reliable in voltage regulation and switching tasks.

Maximum Collector-Emitter Voltage: 50 V

With a high maximum voltage rating, this transistor can withstand increased voltage levels, offering robust protection in diverse operating conditions.

Transistor Element Material: SILICON

Silicon is a commonly used semiconductor material known for its efficiency and reliability, ensuring consistent performance and longevity in electronic devices.

Maximum Collector Current (IC): 2.5 A

The high maximum collector current rating allows this transistor to handle substantial current flow, making it suitable for power switching applications.

Terminal Finish: Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)

This combination of terminal finishes provides excellent conductivity, corrosion resistance, and solderability, ensuring stable connections and long-term reliability.

Terminal Position: SINGLE

Having a single terminal position simplifies installation and connections, allowing for easier integration into circuit layouts and overall system design.

Case Connection: ISOLATED

An isolated case connection helps prevent electrical interference and shorts, ensuring safe operation and reliable performance in various electronic setups.

Nominal Transition Frequency (fT): 140 MHz

The high nominal transition frequency indicates fast response time and signal switching capabilities, making this transistor ideal for high-frequency applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) 2SB1142T attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Configuration:

Minimum DC Current Gain (hFE):

200

JEDEC-95 Code:

TO-126

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

PNP

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2SB1142T Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.75

SB

8541.29.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 20