Loading...

2SB1149-L-AZ

Nec Electronics

2SB1149-L-AZ by Nec Electronics

PNP; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Collector Current (IC): 3 A; Minimum DC Current Gain (hFE): 3000; Qualification: Not Qualified;

Median Price

-

Lifecycle Status

Suppliers In-Stock

0

In-Stock Inventory

< 1k

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 327 parts In-Stock

1+ parts

$0.469

100+ parts

-

1k+ parts

-

10k+ parts

$0.450

327

$0.469

-

-

$0.450

Northwest PG Solutions

USA . 1,149 parts In-Stock

1+ parts

$0.516

100+ parts

-

1k+ parts

-

10k+ parts

$0.455

1,149

$0.516

-

-

$0.455

Technical Specifications

Power Bipolar Junction Transistors (BJT) 2SB1149-L-AZ attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Nec Electronics

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

3 A

Maximum Collector-Emitter Voltage:

100 V

Minimum DC Current Gain (hFE):

3000

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

PNP

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

2SB1149-L-AZ Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.