Loading...

2SB1165S

Onsemi

2SB1165S by Onsemi

The Onsemi 2SB1165S is a PNP Power BJT with max. VCE of 50V and max. IC of 5A, ideal for switching applications. Featuring hFE of 140 and fT of 130MHz, it comes in a plastic/epoxy package with through-hole terminals for easy installation.

Median Price

$0.384

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 13,086 parts In-Stock

1+ parts

-

100+ parts

$0.370

1k+ parts

$0.307

10k+ parts

$0.274

13,086

-

$0.370

$0.307

$0.274

DigiKey

USA . 13,086 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.460

10k+ parts

-

13,086

-

-

$0.460

-

Verical

USA . 10,286 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.384

10k+ parts

$0.342

10,286

-

-

$0.384

$0.342

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 478 parts In-Stock

1+ parts

$0.254

100+ parts

-

1k+ parts

-

10k+ parts

-

478

$0.254

-

-

-

Digiode

USA . 1,973 parts In-Stock

1+ parts

$0.288

100+ parts

-

1k+ parts

-

10k+ parts

-

1,973

$0.288

-

-

-

Chip Stock

USA . 52,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

52,000

-

-

-

-

GES GmbH

Germany . 1 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 399 parts In-Stock

1+ parts

$0.254

100+ parts

-

1k+ parts

-

10k+ parts

-

399

$0.254

-

-

-

Corphita

USA . 2,498 parts In-Stock

1+ parts

$0.273

100+ parts

-

1k+ parts

-

10k+ parts

-

2,498

$0.273

-

-

-

Component Stockers USA

USA . 30,093 parts In-Stock

1+ parts

$0.320

100+ parts

$0.300

1k+ parts

$0.270

10k+ parts

$0.270

30,093

$0.320

$0.300

$0.270

$0.270

Native Components

USA . 856 parts In-Stock

1+ parts

$1.133

100+ parts

-

1k+ parts

-

10k+ parts

-

856

$1.133

-

-

-

Northwest PG Solutions

USA . 1,158 parts In-Stock

1+ parts

$1.246

100+ parts

-

1k+ parts

-

10k+ parts

-

1,158

$1.246

-

-

-

Continental Prestige Electronics

USA . 13,086 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.274

10k+ parts

-

13,086

-

-

$0.274

-

QUARKTWIN TECHNOLOGY LTD

USA . 11,258 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

11,258

-

-

-

-

TANS Electronics

Latvia . 6,922 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6,922

-

-

-

-

Problanco Electronics

Mexico . 1,600 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,600

-

-

-

-

Kulean Microsystems

USA . 866 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

866

-

-

-

-

UHIMA Technologies

Türkiye . 465 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

465

-

-

-

-

SupplyDigital Components

Austria . 294 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

294

-

-

-

-

Overview

Experience superior performance and reliability with the Onsemi 2SB1165S Power BJT. Designed by a trusted industry leader, this PNP transistor is perfect for switching applications, offering a maximum collector-emitter voltage of 50V and a maximum collector current of 5A. Whether you need to control power in automotive systems, industrial equipment, or consumer electronics, this transistor delivers exceptional quality and value. Trust Onsemi for cutting-edge technology and unparalleled customer satisfaction.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for a variety of environments.

Polarity or Channel Type: PNP

PNP transistors are commonly used in high-power applications such as switching circuits.

Configuration: SINGLE

Simplifies circuit design and installation as only one transistor is needed.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient performance in on/off states.

Package Shape: RECTANGULAR

Rectangular shape allows for easy mounting and integration into circuit boards.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide secure connections and are easy to solder onto a PCB.

No. of Terminals: 3

Three terminals allow for versatile connection options in different circuit configurations.

Package Style (Meter): IN-LINE

In-line package style is space-efficient and provides a neat layout for PCB designs.

Minimum DC Current Gain (hFE): 140

Higher current gain ensures efficient amplification and switching capabilities.

Maximum Collector-Emitter Voltage: 50 V

Can handle high voltage levels, making it suitable for a wide range of applications.

Transistor Element Material: SILICON

Silicon material offers good thermal performance and high reliability for long-term use.

Maximum Collector Current (IC): 5 A

Capable of handling high collector currents, making it suitable for power applications.

Terminal Finish: Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)

Multiple terminal finish options offer corrosion resistance and ensure long-term reliability.

Terminal Position: SINGLE

Single terminal position simplifies installation and connection to other components.

Nominal Transition Frequency (fT): 130 MHz

High transition frequency allows for fast switching speeds, making it ideal for high-frequency applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) 2SB1165S attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

5 A

Maximum Collector-Emitter Voltage:

50 V

Configuration:

Minimum DC Current Gain (hFE):

140

JESD-30 Code:

R-PSIP-T3

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

IN-LINE

Polarity or Channel Type:

PNP

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2SB1165S Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.75

SB

8541.29.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 20