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2SB1144S

Onsemi

2SB1144S by Onsemi

Onsemi's 2SB1144S is a PNP BJT transistor with max. Vce of 100V, Ic of 1.5A, and hFE of 140. Ideal for switching applications due to its single configuration and silicon element material. Features through-hole terminals in a rectangular package style for flange mount installation.

Median Price

$0.251

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

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Rochester

USA . 13,014 parts In-Stock

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-

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$0.251

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$0.208

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$0.186

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$0.251

$0.208

$0.186

DigiKey

USA . 13,014 parts In-Stock

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$0.310

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$0.310

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Verical

USA . 7,328 parts In-Stock

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$0.232

7,328

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$0.232

Distributors (In-Stock)

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Vyrian

USA . 1,277 parts In-Stock

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$0.166

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$0.166

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Digiode

USA . 424 parts In-Stock

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$0.196

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Q Components

USA . 16,500 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 175 parts In-Stock

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LittleDiode

UK . 19 parts In-Stock

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Corohmni

South Africa . 374 parts In-Stock

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$0.166

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$0.166

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Corphita

USA . 1,759 parts In-Stock

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$0.185

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1,759

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Northwest PG Solutions

USA . 1,142 parts In-Stock

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$2.473

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Continental Prestige Electronics

USA . 13,694 parts In-Stock

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$0.166

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TANS Electronics

Latvia . 7,715 parts In-Stock

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Problanco Electronics

Mexico . 7,316 parts In-Stock

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Kulean Microsystems

USA . 7,162 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

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SupplyDigital Components

Austria . 6,548 parts In-Stock

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Native Components

USA . 981 parts In-Stock

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$2.181

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Perfect Parts

USA . 392 parts In-Stock

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392

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Cyclops Electronics Ltd (Excess)

UK . 175 parts In-Stock

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175

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Glotronic Ltd.

UK . 140 parts In-Stock

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UHIMA Technologies

Türkiye . 105 parts In-Stock

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Overview

Experience the power of innovation with the Onsemi 2SB1144S Power Bipolar Junction Transistor. Manufactured by industry leader Onsemi, this PNP transistor is designed for switching applications, offering reliable performance and high efficiency. With a maximum collector-emitter voltage of 100V and a maximum collector current of 1.5A, this transistor is ideal for a wide range of electronic designs. Trust in Onsemi's reputation for quality and precision engineering, and unlock the potential of your next project with the 2SB1144S.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring long-lasting performance.

Polarity or Channel Type: PNP

Suitable for various circuit designs where PNP transistors are required.

Configuration: SINGLE

Simplified design and easy to integrate into circuits.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient performance in such scenarios.

Maximum Collector-Emitter Voltage: 100 V

Supports higher voltage levels, making it versatile for different circuit requirements.

Maximum Collector Current (IC): 1.5 A

Capable of handling higher currents, suitable for applications that require higher power handling capabilities.

Technical Specifications

Power Bipolar Junction Transistors (BJT) 2SB1144S attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

100 V

Configuration:

Minimum DC Current Gain (hFE):

140

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

PNP

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2SB1144S Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.75

SB

8541.29.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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