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IGD01N120H2BUMA1

Infineon Technologies

IGD01N120H2BUMA1 by Infineon Technologies

Infineon's IGD01N120H2BUMA1 is a NPN BJT transistor with 1200V VCE, 3.2A IC, and 150°C max operating temp. Ideal for switching applications, it comes in a small outline package with Gull Wing terminals for surface mounting.

Median Price

$0.774

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Verical

USA . 4,094 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.721

10k+ parts

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4,094

-

-

$0.721

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Rochester

USA . 3,074 parts In-Stock

1+ parts

-

100+ parts

$0.828

1k+ parts

$0.687

10k+ parts

$0.612

3,074

-

$0.828

$0.687

$0.612

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 508 parts In-Stock

1+ parts

$0.645

100+ parts

-

1k+ parts

-

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508

$0.645

-

-

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Nova Conductors

Japan . 750 parts In-Stock

1+ parts

$0.856

100+ parts

-

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750

$0.856

-

-

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Chip Stock

USA . 4,700 parts In-Stock

1+ parts

-

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4,700

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Vyrian

USA . 2,827 parts In-Stock

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2,827

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Aztec Data Supply Inc.

USA . 4,260 parts In-Stock

1+ parts

$0.410

100+ parts

-

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4,260

$0.410

-

-

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Corohmni

South Africa . 72 parts In-Stock

1+ parts

$0.410

100+ parts

-

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72

$0.410

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Ampacity Inc.

Singapore . 3,702 parts In-Stock

1+ parts

$0.580

100+ parts

-

1k+ parts

-

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3,702

$0.580

-

-

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Semicontronic

India . 3,685 parts In-Stock

1+ parts

$0.580

100+ parts

$0.566

1k+ parts

$0.563

10k+ parts

-

3,685

$0.580

$0.566

$0.563

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Corphita

USA . 394 parts In-Stock

1+ parts

$0.611

100+ parts

-

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394

$0.611

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Modulus Dynamics

Lithuania . 18,449 parts In-Stock

1+ parts

$1.255

100+ parts

$1.205

1k+ parts

$1.155

10k+ parts

-

18,449

$1.255

$1.205

$1.155

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Microchip USA

USA . 6,555 parts In-Stock

1+ parts

$5.559

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6,555

$5.559

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AZTECH Wire

Italy . 840 parts In-Stock

1+ parts

$21.910

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840

$21.910

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QUARKTWIN TECHNOLOGY LTD

USA . 18,897 parts In-Stock

1+ parts

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18,897

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Continental Prestige Electronics

USA . 5,658 parts In-Stock

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5,658

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Argo Parts USA

USA . 2,769 parts In-Stock

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2,769

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Authorized Procurement Solutions

USA . 2,000 parts In-Stock

1+ parts

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2,000

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Netroflash

USA . 50 parts In-Stock

1+ parts

-

100+ parts

$0.839

1k+ parts

$0.813

10k+ parts

$0.796

50

-

$0.839

$0.813

$0.796

Overview

Unlock the power of innovation with the IGD01N120H2BUMA1 from Infineon Technologies. This Power BJT transistor offers superior quality and reliability, making it a top choice for switching applications. With a maximum operating temperature of 150°C and a collector-emitter voltage of 1200V, this NPN transistor delivers unmatched performance. Its surface mount design and small outline package ensure easy installation, while its high collector current of 3.2A provides efficient operation. Trust in Infineon Technologies to provide cutting-edge solutions for your electronic needs. Experience the difference with the IGD01N120H2BUMA1.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the transistor, ensuring reliable performance and durability.

Polarity or Channel Type: NPN

Commonly used in digital and analog circuits, making it versatile for various applications.

Configuration: SINGLE

Simplifies circuit design and makes it easier to control and manage the transistor.

Transistor Application: SWITCHING

Designed specifically for switching applications, offering fast and efficient performance.

Surface Mount: YES

Allows for easy and compact installation on PCBs, saving space and improving overall design aesthetics.

Package Shape: RECTANGULAR

Facilitates easy placement and soldering on the circuit board, enhancing manufacturing efficiency.

Terminal Form: GULL WING

Enhances thermal performance and allows for better heat dissipation, ensuring reliable operation.

No. of Terminals: 2

Simplifies circuit connections and reduces the chances of wiring errors.

Package Style (Meter): SMALL OUTLINE

Fits well in compact electronic devices, making it suitable for space-constrained applications.

Maximum Operating Temperature: 150 °C

Can operate at high temperatures without compromising performance, ensuring reliability in harsh environments.

Maximum Collector-Emitter Voltage: 1200 V

Supports high voltage applications, making it ideal for power electronics and industrial systems.

Transistor Element Material: SILICON

Provides good electrical properties and reliability compared to other materials, ensuring long-term performance.

Maximum Collector Current (IC): 3.2 A

Can handle moderate current loads, making it suitable for various switching applications.

Terminal Finish: TIN

Provides good electrical conductivity and corrosion resistance for reliable connections.

Terminal Position: SINGLE

Simplifies circuit layout and connections, reducing complexity and potential errors.

Moisture Sensitivity Level (MSL): 3

Indicates the level of protection against moisture, ensuring operational reliability in humid environments.

Case Connection: COLLECTOR

Specifies the connection point of the transistor, aiding in proper circuit design and integration.

Technical Specifications

Power Bipolar Junction Transistors (BJT) IGD01N120H2BUMA1 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Infineon Technologies

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

1200 V

Configuration:

JEDEC-95 Code:

TO-252AA

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

3

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

IGD01N120H2BUMA1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

Category top products 20

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