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NJVMJD32CG

Onsemi

NJVMJD32CG by Onsemi

NJVMJD32CG by Onsemi is a PNP BJT with 15W power dissipation, 3A collector current, and 150°C max operating temp. Ideal for automotive applications due to AEC-Q101 standard compliance and 3MHz transition frequency.

Median Price

$0.970

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 215 parts In-Stock

1+ parts

$0.970

100+ parts

$0.413

1k+ parts

$0.300

10k+ parts

$0.222

215

$0.970

$0.413

$0.300

$0.222

DigiKey

USA . 56 parts In-Stock

1+ parts

$0.970

100+ parts

$0.414

1k+ parts

$0.301

10k+ parts

$0.222

56

$0.970

$0.414

$0.301

$0.222

Flip Electronics (Authorized)

USA . 9,275 parts In-Stock

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-

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9,275

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Verical

USA . 3,075 parts In-Stock

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$0.193

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3,075

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$0.193

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 1,000 parts In-Stock

1+ parts

$0.294

100+ parts

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1,000

$0.294

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Digiode

USA . 2,488 parts In-Stock

1+ parts

$0.551

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2,488

$0.551

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Chip Stock

USA . 57,000 parts In-Stock

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57,000

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Vyrian

USA . 10,004 parts In-Stock

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10,004

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Flip Electronics

USA . 9,275 parts In-Stock

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9,275

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 196 parts In-Stock

1+ parts

$0.288

100+ parts

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196

$0.288

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Bastille Electronics

Australia . 500 parts In-Stock

1+ parts

$0.294

100+ parts

$0.279

1k+ parts

$0.265

10k+ parts

$0.262

500

$0.294

$0.279

$0.265

$0.262

Corphita

USA . 2,154 parts In-Stock

1+ parts

$0.522

100+ parts

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2,154

$0.522

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Semicontronic

India . 3,253 parts In-Stock

1+ parts

$0.770

100+ parts

$0.751

1k+ parts

$0.747

10k+ parts

-

3,253

$0.770

$0.751

$0.747

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Ampacity Inc.

Singapore . 3,099 parts In-Stock

1+ parts

$0.770

100+ parts

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3,099

$0.770

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Aztec Data Supply Inc.

USA . 93 parts In-Stock

1+ parts

$1.410

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93

$1.410

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Lixinc

USA . 18,745 parts In-Stock

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RC Electronics

USA . 7,500 parts In-Stock

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7,500

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SupplyDigital Components

Austria . 5,273 parts In-Stock

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5,273

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TANS Electronics

Latvia . 3,884 parts In-Stock

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3,884

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Continental Prestige Electronics

USA . 3,830 parts In-Stock

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3,830

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Kulean Microsystems

USA . 1,668 parts In-Stock

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1,668

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Argo Parts USA

USA . 1,312 parts In-Stock

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Problanco Electronics

Mexico . 978 parts In-Stock

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978

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UHIMA Technologies

Türkiye . 540 parts In-Stock

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540

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GreenTree Electronics

Israel . 225 parts In-Stock

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225

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Overview

Discover the power of the NJVMJD32CG by Onsemi, a top-quality Power Bipolar Junction Transistor that promises superior performance and reliability. Manufactured by Onsemi, a renowned leader in semiconductor technology, this PNP transistor is ideal for a wide range of applications. With a maximum power dissipation of 15W and a maximum collector current of 3A, this transistor offers unmatched value and benefits to customers looking for high-performance electronic components. Upgrade your projects with the NJVMJD32CG and experience the difference in quality and efficiency.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the transistor, ensuring a longer lifespan and reliability.

Polarity or Channel Type: PNP

This PNP configuration allows for easy integration into existing circuit designs, making it versatile and compatible with various applications.

Configuration: SINGLE

The single configuration simplifies circuit design and reduces the complexity of connections, making it easier to work with.

Surface Mount: YES

Being surface mountable allows for easy and efficient installation on PCBs, saving space and simplifying assembly processes.

Terminal Form: GULL WING

The gull wing terminal form provides secure connections and easy soldering, ensuring a reliable electrical connection.

Maximum Power Dissipation (Abs): 15 W

With a high maximum power dissipation, this transistor can handle high power levels without overheating, making it suitable for demanding applications.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space on the PCB, allowing for compact designs in tight spaces.

Minimum DC Current Gain (hFE): 10

The minimum DC current gain ensures consistent and stable amplification performance in various operating conditions.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this transistor can withstand elevated temperatures, ensuring reliable performance in harsh environments.

Transistor Element Material: SILICON

Silicon is a commonly used and reliable semiconductor material, providing good electrical properties and performance in the transistor.

Maximum Collector Current (IC): 3 A

The high maximum collector current allows for handling of large currents, making it suitable for power applications.

Terminal Finish: MATTE TIN

Matte tin finish provides good solderability and conductivity for reliable electrical connections.

Refow Temperature Profile: Peak Reflow Temperature °C: 260, Maximum Time At Peak Reflow Temperature (s): 30

The peak reflow temperature and time ensure proper soldering and reflow processes for the transistor, ensuring a secure and reliable connection.

Reference Standard: AEC-Q101

Compliance with the AEC-Q101 standard ensures high reliability and quality of the transistor for automotive applications.

Nominal Transition Frequency (fT): 3 MHz

With a high nominal transition frequency, this transistor can operate at high frequencies, making it suitable for high-speed applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) NJVMJD32CG attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

3 A

Configuration:

Minimum DC Current Gain (hFE):

10

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Reference Standard:

AEC-Q101

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

NJVMJD32CG Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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