Loading...

BD135TG

Onsemi

BD135TG by Onsemi

The Onsemi BD135TG is a NPN BJT with max power dissipation of 1.25W, hFE of 40, and IC of 1.5A. Ideal for power applications where a single configuration is needed, operating up to 150 °C.

Median Price

$0.374

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 222 parts In-Stock

1+ parts

$1.270

100+ parts

$0.522

1k+ parts

-

10k+ parts

-

222

$1.270

$0.522

-

-

Farnell

UK . 38,295 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.305

38,295

-

-

-

$0.305

Rochester

USA . 37,695 parts In-Stock

1+ parts

-

100+ parts

$0.352

1k+ parts

$0.292

10k+ parts

$0.261

37,695

-

$0.352

$0.292

$0.261

Verical

USA . 21,050 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.397

10k+ parts

$0.326

21,050

-

-

$0.397

$0.326

Flip Electronics (Authorized)

USA . 25 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

25

-

-

-

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 258 parts In-Stock

1+ parts

$0.271

100+ parts

-

1k+ parts

-

10k+ parts

-

258

$0.271

-

-

-

Chip Stock

USA . 58,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

58,000

-

-

-

-

Vyrian

USA . 8,779 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

8,779

-

-

-

-

Flip Electronics

USA . 25 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

25

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 1,534 parts In-Stock

1+ parts

$0.256

100+ parts

-

1k+ parts

-

10k+ parts

-

1,534

$0.256

-

-

-

Corohmni

South Africa . 92 parts In-Stock

1+ parts

$0.285

100+ parts

-

1k+ parts

-

10k+ parts

-

92

$0.285

-

-

-

Microchip USA

USA . 2,893 parts In-Stock

1+ parts

$5.070

100+ parts

$5.040

1k+ parts

$5.020

10k+ parts

$5.010

2,893

$5.070

$5.040

$5.020

$5.010

Continental Prestige Electronics

USA . 38,295 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.340

10k+ parts

-

38,295

-

-

$0.340

-

Kepictronics

USA . 9,250 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

9,250

-

-

-

-

SupplyDigital Components

Austria . 6,095 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6,095

-

-

-

-

TANS Electronics

Latvia . 5,320 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,320

-

-

-

-

Problanco Electronics

Mexico . 4,736 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,736

-

-

-

-

Kulean Microsystems

USA . 2,706 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,706

-

-

-

-

Northwest PG Solutions

USA . 1,666 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,666

-

-

-

-

UHIMA Technologies

Türkiye . 932 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

932

-

-

-

-

Native Components

USA . 10 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

10

-

-

-

-

Overview

Experience superior performance and reliability with the Onsemi BD135TG power bipolar junction transistor. Manufactured by Onsemi, a trusted name in semiconductor technology, this NPN transistor offers a range of applications in electronics, power supplies, and amplifiers. With a maximum power dissipation of 1.25W and a minimum DC current gain of 40, this transistor provides efficient power regulation and control. Trust Onsemi for high-quality components that deliver exceptional value and performance to meet your electronic needs.

Feature Benefit Bullets

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits, making this product versatile for various applications.

Configuration: SINGLE

Single configuration makes this transistor easy to use and integrate into circuits without complexity.

Maximum Power Dissipation (Abs): 1.25 W

With a maximum power dissipation of 1.25W, this transistor can handle relatively high power levels, making it suitable for medium power applications.

Minimum DC Current Gain (hFE): 40

Having a minimum DC current gain of 40 ensures efficient amplification of signals in electronic circuits.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature of 150 °C allows this transistor to withstand elevated temperatures, increasing reliability in various environments.

Maximum Collector Current (IC): 1.5 A

With a maximum collector current of 1.5A, this transistor can handle moderate current levels, suitable for many applications requiring current amplification.

Terminal Finish: MATTE TIN

Matte tin finish provides good solderability and corrosion resistance, ensuring longevity and ease of assembly in electronic circuits.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BD135TG attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Configuration:

Minimum DC Current Gain (hFE):

40

JESD-609 Code:

e3

No. of Elements:

1

Maximum Operating Temperature:

150 Cel

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Trade Compliance

BD135TG Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 20