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2SD1803T-TL-E

Onsemi

2SD1803T-TL-E by Onsemi

2SD1803T-TL-E by Onsemi is a PNP power bipolar junction transistor (BJT) with a max collector-emitter voltage of 50V and a max collector current of 5A. It is commonly used for switching applications due to its low VCEsat of 0.55V and high transition frequency of 130MHz.

Median Price

$0.327

Lifecycle Status

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8

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1k+

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Rochester

USA . 399 parts In-Stock

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$0.327

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$0.272

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$0.242

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Digiode

USA . 1,423 parts In-Stock

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$0.347

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Nova Conductors

Japan . 10 parts In-Stock

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Vyrian

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Corphita

USA . 154 parts In-Stock

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$0.328

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Corohmni

South Africa . 302 parts In-Stock

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$0.365

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AZTECH Wire

Italy . 389 parts In-Stock

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Aranea Global

USA . 1,000 parts In-Stock

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$0.457

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Ampacity Inc.

Singapore . 186 parts In-Stock

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TANS Electronics

Latvia . 7,548 parts In-Stock

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Lixinc

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Perfect Parts

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Kulean Microsystems

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Overview

Discover the power and reliability of the 2SD1803T-TL-E by Onsemi, a top-quality Power Bipolar Junction Transistor (BJT) designed for switching applications. With its advanced technology and single configuration, this transistor offers exceptional performance in a compact and durable package. Its low VCEsat and high maximum collector current make it perfect for high-power applications. Whether you're building amplifiers, LED drivers, or motor control circuits, the 2SD1803T-TL-E delivers unmatched efficiency and precision. Trust Onsemi's expertise and choose the 2SD1803T-TL-E for all your power transistor needs.

Feature Benefit Bullets

Transistor Element Material:

SILICON - This material offers high /formance and reliability, making it a suitable choice for power applications.

Maximum Power Dissipation (Abs):

20 W - This high power dissipation capability allows the transistor to handle more demanding tasks, making it suitable for various applications.

Maximum VCEsat:

0.55 V - With a low collector-emitter saturation voltage, this transistor minimizes power losses and increases efficiency in switching applications.

Nominal Transition Frequency (fT):

130 MHz - This high transition frequency enables the transistor to o/ate at faster switching speeds, making it ideal for high-frequency applications.

Maximum Collector-Emitter Voltage:

50 V - The higher voltage rating provides safety and allows the transistor to o/ate in a wide range of applications.

Maximum O/ating Tem/ature:

150°C - The high maximum tem/ature ensures the transistor can withstand demanding thermal conditions, enhancing its reliability and lifespan.

No. of Terminals:

2 - With just two terminals, this transistor is easy to integrate into circuits and simplifies the overall design.

Minimum DC Current Gain (hFE):

35 - The minimum current gain indicates that the transistor can amplify small input signals efficiently, ensuring accurate signal processing.

Package Shape:

RECTANGULAR - The rectangular shape facilitates easy placement on circuit boards and offers compatibility with standard mounting methods.

Terminal Position:

SINGLE - The single terminal position simplifies the installation and connection process, saving time and effort during assembly.

Surface Mount:

YES - The surface mount capability allows for efficient and space-saving placement on PCBs, enabling compact designs and streamlined production.

Peak Reflow Tem/ature (°C):

260 - With a high peak reflow tem/ature, this transistor can withstand high-tem/ature soldering processes, ensuring reliable and durable connections.

Package Body Material:

PLASTIC/EPOXY - The use of plastic/epoxy material offers good protection, lightweight construction, and cost-effectiveness, making it an ideal choice for various applications.

Terminal Finish:

TIN BISMUTH - The tin bismuth finish provides excellent solderability, ensuring secure and reliable connections during assembly.

Maximum Time At Peak Reflow Tem/ature (s):

30 - The extended time at peak reflow tem/ature allows for pro/ soldering and component bonding, resulting in reliable /formance.

Polarity or Channel Type:

PNP - The PNP polarity or channel type ensures compatibility with specific circuit configurations and simplifies circuit design and connections.

Configuration:

SINGLE - The single configuration enables easy integration into circuit designs, streamlines assembly, and simplifies troubleshooting.

Case Connection:

COLLECTOR - The case connection to the collector simplifies the thermal management of the transistor, enhancing heat dissipation and overall /formance.

Transistor Application:

SWITCHING - Designed specifically for switching applications, this transistor provides fast and efficient switching transitions, making it suitable for various power control applications.

Maximum Power Dissipation Ambient:

1 W - The low power dissipation in ambient conditions ensures efficient o/ation and minimizes heat generation, contributing to overall energy efficiency.

Maximum Collector-Base Capacitance:

60 pF - With a low collector-base capacitance, this transistor allows for improved high-frequency /formance, reducing signal distortion and ensuring accurate amplification.

Package Style (Meter):

SMALL OUTLINE - The small outline package style offers space-saving benefits, making it a good choice for compact designs and efficient PCB layout.

Maximum Collector Current (IC):

5 A - With a high maximum collector current rating, this transistor can handle higher current loads, making it suitable for power applications that require high current switching.

Terminal Form:

GULL WING - The gull-wing terminal form ensures secure and reliable connections, improving overall solder joint strength and minimizing chances of failure.

Technical Specifications

Power Bipolar Junction Transistors (BJT) 2SD1803T-TL-E attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

5 A

Maximum Collector-Base Capacitance:

60 pF

Maximum Collector-Emitter Voltage:

50 V

Configuration:

Minimum DC Current Gain (hFE):

35

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e6

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation Ambient:

1 W

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN BISMUTH

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.55 V

Trade Compliance

2SD1803T-TL-E Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.75

SB

8541.29.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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