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2SD1047C

Sanyo Electric

2SD1047C by Sanyo Electric

2SD1047C by Sanyo Electric is a NPN BJT transistor with 140V VCE, 12A IC, and 120W Ptot. Ideal for switching applications due to its high power dissipation capability and low hFE of 35. Suitable for use in various electronic circuits requiring a single-channel configuration.

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Overview

Looking for a reliable power BJT transistor? Look no further than the 2SD1047C by Sanyo Electric. With a maximum power dissipation of 120W and a maximum collector current of 12A, this NPN transistor is perfect for switching applications. Sanyo Electric, known for their high-quality electronic components, delivers superior performance and reliability with the 2SD1047C. Whether you're designing industrial equipment or consumer electronics, this transistor offers exceptional value and efficiency. Upgrade your designs today with the 2SD1047C from Sanyo Electric.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the transistor, making it suitable for a variety of applications.

Polarity or Channel Type: NPN

The NPN configuration allows for easy integration into various circuit designs, enhancing flexibility in switching applications.

Configuration: SINGLE

The single configuration simplifies the circuit layout and reduces complexity in design, making it user-friendly for engineers.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor delivers optimal performance and efficiency in controlling currents.

Package Shape: RECTANGULAR

The rectangular shape allows for easy mounting and installation, saving time and effort during the assembly process.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide a secure and stable connection, ensuring reliable performance in demanding environments.

No. of Terminals: 3

With three terminals, this transistor offers versatility in circuit connections, enabling compatibility with various systems.

Maximum Power Dissipation (Abs): 120 W

The high power dissipation capability of 120W ensures the transistor can handle heavy loads, making it reliable for demanding applications.

Package Style (Meter): FLANGE MOUNT

The flange mount package style offers easy installation and secure mounting, enhancing the durability and longevity of the transistor.

Minimum DC Current Gain (hFE): 35

With a minimum DC current gain of 35, this transistor provides consistent and reliable amplification in the circuit.

Maximum Operating Temperature: 150 °C

Able to withstand temperatures up to 150°C, this transistor is suitable for high-temperature environments and applications.

Maximum Collector-Emitter Voltage: 140 V

The high maximum collector-emitter voltage rating of 140V ensures the transistor can handle large voltage fluctuations in the circuit.

Transistor Element Material: SILICON

Silicon-based transistors offer superior performance and reliability compared to other materials, making this transistor a durable choice.

Maximum Collector Current (IC): 12 A

With a maximum collector current of 12A, this transistor can handle large currents, making it ideal for high-power applications.

Terminal Position: SINGLE

The single terminal position simplifies installation and connection, ensuring ease of use and reliability in the circuit.

Nominal Transition Frequency (fT): 15 MHz

The high nominal transition frequency of 15MHz allows for fast switching speeds, ensuring quick response times in the circuit.

Technical Specifications

Power Bipolar Junction Transistors (BJT) 2SD1047C attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Sanyo Electric

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

140 V

Configuration:

Minimum DC Current Gain (hFE):

35

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2SD1047C Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Sanyo Electric

In December 2009, Panasonic Corporation acquired the majority of the voting shares of SANYO Electric Co., Ltd. through tender offer and made it a consolidated subsidiary. About Panasonic Panasonic Corporation is a worldwide leader in the development and manufacture of electronic products for a wide range of consumer, business, and industrial needs. Based in Osaka, Japan, the company recorded consolidated net sales of 7.77 trillion yen (US$78.4 billion) for the year ended March 31, 2009. The company's shares are listed on the Tokyo, Osaka, Nagoya and New York (NYSE: PC) stock exchanges. For more information on the company and the Panasonic brand, visit the company's website at http://panasonic.net. About SANYO SANYO Electric Co., Ltd. is a leading company for energy and environment, providing solutions for energy, environment and lifestyle applications based on its brand vision 'Think GAIA.' SANYO's businesses are divided into three business domains: Energy, Ecology and Electronics. These three areas cover a broad range of products and services such as rechargeable batteries, photovoltaic systems, HVAC/R equipment, digital imaging devices, personal navigation systems, home appliances, electronic components and others. For further information, please visit SANYO's web site at http://sanyo.com/.

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