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2SD111

Continental Device India

2SD111 by Continental Device India

2SD111 by Continental Device India is a NPN BJT transistor with hFE of 30, VCE of 80V, and IC of 10A. Ideal for switching applications due to its single configuration and silicon element material. The package style is flange mount with a round shape and bottom terminal position.

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Overview

Discover the power and reliability of the 2SD111 by Continental Device India. As a leading manufacturer in the industry, Continental Device India produces top-quality Power Bipolar Junction Transistors (BJTs) like the 2SD111, known for their exceptional performance in switching applications. With a maximum collector-emitter voltage of 80V and a maximum collector current of 10A, this NPN transistor offers unmatched value and benefits to customers seeking precision and efficiency in their electronic devices. Upgrade your projects with the 2SD111 and experience superior results today.

Feature Benefit Bullets

Package Body Material: METAL

Metal packages provide good thermal conductivity, which helps in dissipating heat efficiently during operation.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching applications, making them versatile for various circuit designs.

Configuration: SINGLE

Single configuration transistors are simpler to manage in circuit designs and are easier to troubleshoot if issues arise.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor offers fast switching speeds and can handle high current levels without issues.

Package Shape: ROUND

Round package shapes are often compact and space-efficient, making them suitable for applications where size is a concern.

Terminal Form: PIN/PEG

The pin/peg terminals offer easy soldering and connection to circuit boards or other components.

No. of Terminals: 2

Having only 2 terminals simplifies the integration of the transistor into a circuit, reducing complexity and potential points of failure.

Package Style (Meter): FLANGE MOUNT

Flange mount packages are sturdy and provide stable mounting options for the transistor in various applications.

Minimum DC Current Gain (hFE): 30

A minimum DC current gain of 30 ensures consistent and reliable amplification of current in the transistor circuit.

Maximum Collector-Emitter Voltage: 80 V

With a maximum voltage rating of 80V, this transistor can handle a wide range of voltage levels in switching applications.

Transistor Element Material: SILICON

Silicon-based transistors are known for their high performance and reliability, making them a preferred choice for many applications.

Maximum Collector Current (IC): 10 A

Capable of handling a maximum current of 10A, this transistor is suitable for high-power switching circuits and applications.

Terminal Position: BOTTOM

The bottom terminal position makes it convenient for installing and mounting the transistor securely in a circuit or on a heat sink.

Case Connection: COLLECTOR

The collector case connection allows for efficient dissipation of heat from the transistor, enhancing its overall reliability and performance.

Technical Specifications

Power Bipolar Junction Transistors (BJT) 2SD111 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Continental Device India

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

80 V

Configuration:

Minimum DC Current Gain (hFE):

30

JEDEC-95 Code:

TO-3

JESD-30 Code:

O-MBFM-P2

No. of Elements:

1

No. of Terminals:

2

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Form:

PIN/PEG

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

2SD111 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-21-882-2830, 5961218822830

NIIN

218822830

Manufacturer Highlights

Continental Device India

Continental Device India Ltd., (CDIL) is an ISO 9001, IATF 16949, and ISO 14001 certified company that pioneered the manufacturing of Silicon Semiconductor Chips and Devices in India in 1964. It launched its Electronic Manufacturing Services (EMS) division (Deltron) in 1982. Manufacturing semiconductors for over 50 years, has created a name for CDIL in India and a brand that is recognized globally. This has only been possible by adhering to international standards of quality, constant technology and process upgrades, and due to the hard work of a team of dedicated professionals who have laid down the standards for R&D, engineering and management in India.

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