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2SD1090

Toshiba

2SD1090 by Toshiba

Toshiba's 2SD1090 is a NPN BJT transistor with max VCEsat of 1V, IC of 5A, and hFE of 500. Ideal for switching applications due to its high power dissipation of 80W and max collector-emitter voltage of 180V. Package style is flange mount with through-hole terminals.

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Overview

Unleash the power of innovation with the Toshiba 2SD1090 Power Bipolar Junction Transistor. Manufactured by industry leader Toshiba, this NPN transistor is perfect for switching applications, offering a maximum collector current of 5A and a minimum DC current gain of 500. With a maximum VCEsat of just 1V, this transistor provides high performance while maintaining energy efficiency. Whether you're designing industrial equipment or consumer electronics, the 2SD1090 delivers reliable and consistent results. Upgrade your projects with Toshiba's cutting-edge technology and experience the quality and value that sets this product apart from the competition.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package body material provides good insulation and protection for the transistor, making it durable and reliable in various operating conditions.

Polarity or Channel Type: NPN

NPN configuration allows for easy integration into circuits and compatibility with other NPN devices, offering flexibility in design and application.

Configuration: SINGLE

Single configuration simplifies circuit design and implementation, making it suitable for straightforward switching applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor offers fast response times and efficient operation in switching circuits.

Maximum VCEsat: 1 V

Low VCEsat of 1V minimizes power loss and heat dissipation, improving overall efficiency and performance of the transistor.

Package Shape: RECTANGULAR

Rectangular package shape allows for easy mounting and placement on circuit boards, ensuring convenient installation and space-saving design.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide secure and reliable connections, making it suitable for through-hole PCB assembly and manual soldering processes.

Maximum Power Dissipation (Abs): 80 W

High maximum power dissipation of 80W allows for handling of high power loads and continuous operation without the risk of overheating.

Maximum Power Dissipation Ambient: 80 W

With a maximum power dissipation of 80W in ambient conditions, this transistor can withstand high operating temperatures and power demands.

Minimum DC Current Gain (hFE): 500

High minimum DC current gain of 500 ensures consistent and stable amplification of input signals, improving overall performance in switching applications.

Maximum Operating Temperature: 150 °C

High maximum operating temperature of 150°C allows for reliable operation in a wide range of environmental conditions, suitable for industrial applications.

Maximum Collector-Emitter Voltage: 180 V

High maximum collector-emitter voltage of 180V provides ample voltage handling capability, ensuring durability and reliability in high voltage applications.

Transistor Element Material: SILICON

Silicon material used in the transistor element ensures high-performance characteristics and reliability, making it a preferred choice for many applications.

Maximum Collector Current (IC): 5 A

With a maximum collector current of 5A, this transistor can handle high current loads without the risk of damage, suitable for various switching applications.

Terminal Position: SINGLE

Single terminal position simplifies circuit design and installation, ensuring ease of use and compatibility with standard configurations.

Case Connection: COLLECTOR

Collector case connection enhances thermal stability and heat dissipation, ensuring reliable operation under high power conditions.

Technical Specifications

Power Bipolar Junction Transistors (BJT) 2SD1090 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Toshiba

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

5 A

Maximum Collector-Emitter Voltage:

180 V

Configuration:

Minimum DC Current Gain (hFE):

500

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation Ambient:

80 W

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Maximum VCEsat:

1 V

Trade Compliance

2SD1090 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

Manufacturer Highlights

Toshiba

TOSHIBA, is a Japanese multinational conglomerate corporation headquartered in Minato, Tokyo, Japan. Its diversified products and services include power, industrial and social infrastructure systems, elevators and escalators, electronic components, semiconductors, hard disk drives (HDD), printers, batteries, lighting, as well as IT solutions such as quantum cryptography which has been in development at Cambridge Research Laboratory, Toshiba Europe, located in the United Kingdom, now being commercialised.It was one of the biggest manufacturers of personal computers, consumer electronics, home appliances, and medical equipment. As a semiconductor company and the inventor of flash memory, Toshiba had been one of the top 10 in the chip industry until its flash memory unit was spun off as Toshiba Memory, later Kioxia, in the late 2010s.

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