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2SD1897F

ROHM

2SD1897F by ROHM

ROHM's 2SD1897F is a NPN BJT with max. collector-emitter voltage of 100V, ideal for amplifier applications. Featuring min. DC current gain of 260 and max. power dissipation of 30W, it offers high performance in a plastic/epoxy package suitable for through-hole mounting.

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Vyrian

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Nova Conductors

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37

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AZTECH Wire

Italy . 580 parts In-Stock

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Argo Parts USA

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Continental Prestige Electronics

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Overview

Discover the power and reliability of the 2SD1897F by ROHM, a high-quality Power Bipolar Junction Transistor perfect for amplifier applications. With a maximum collector-emitter voltage of 100V and a minimum DC current gain of 260, this NPN transistor offers exceptional performance and efficiency. ROHM, known for its superior manufacturing standards, ensures that this transistor delivers unmatched value and benefits to customers. Upgrade your electronic projects with the 2SD1897F and experience top-notch quality and reliability.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the transistor, ensuring reliability and longevity.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits, making this transistor suitable for use in various amplifier applications.

Configuration: SINGLE

Simplifies circuit design and integration, making it easier to use for amplifier applications.

Transistor Application: AMPLIFIER

Specifically designed for amplification, ensuring optimal performance in amplifier circuits.

Package Shape: RECTANGULAR

Compact and space-saving design, ideal for various electronic devices with limited space.

Terminal Form: THROUGH-HOLE

Easy to solder onto a circuit board, providing a strong and reliable connection for the transistor.

Maximum Power Dissipation (Abs): 30 W

Can handle higher power levels without overheating, ensuring stable operation under demanding conditions.

Minimum DC Current Gain (hFE): 260

High current gain allows for efficient signal amplification, improving the performance of amplifier circuits.

Maximum Collector-Emitter Voltage: 100 V

Suitable for applications requiring higher voltage levels, providing flexibility in circuit design.

Maximum Collector Current (IC): 5 A

Can carry higher current levels, making it suitable for applications that require higher power output.

Nominal Transition Frequency (fT): 8 MHz

Higher transition frequency allows for faster response times in amplifier circuits, improving overall performance.

Technical Specifications

Power Bipolar Junction Transistors (BJT) 2SD1897F attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from ROHM

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

5 A

Maximum Collector-Emitter Voltage:

100 V

Configuration:

Minimum DC Current Gain (hFE):

260

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2SD1897F Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

ROHM

Rohm Co Ltd is a Japan-based company that manufactures and distributes electronic components for use in automotive, transportation, medical, healthcare, audiovisual, telecommunications, digital power, computer and peripherals, and home appliance end markets. Its product portfolio includes integrated circuits in memory, amplifiers, switches, data converters, and microcontrollers; discrete semiconductors, such as transistors and diodes; power devices; passive devices, such as resistors and capacitors; and optoelectronic devices.

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