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2SD1803T-TL-H

Onsemi

2SD1803T-TL-H by Onsemi

Onsemi's 2SD1803T-TL-H is a PNP BJT transistor for switching applications. It has a low VCEsat of 0.55V, high hFE of 35, and can handle up to 5A collector current. With a max operating temperature of 150°C, it is ideal for power management in compact electronic devices.

Median Price

$0.564

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 717 parts In-Stock

1+ parts

$1.760

100+ parts

$0.752

1k+ parts

$0.597

10k+ parts

-

717

$1.760

$0.752

$0.597

-

DigiKey

USA . 586 parts In-Stock

1+ parts

$1.760

100+ parts

$0.752

1k+ parts

$0.568

10k+ parts

$0.441

586

$1.760

$0.752

$0.568

$0.441

Arrow

USA . 1,400 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.564

10k+ parts

$0.440

1,400

-

-

$0.564

$0.440

Verical

USA . 1,400 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.564

10k+ parts

$0.440

1,400

-

-

$0.564

$0.440

Rochester

USA . 340 parts In-Stock

1+ parts

-

100+ parts

$0.559

1k+ parts

$0.464

10k+ parts

$0.414

340

-

$0.559

$0.464

$0.414

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,957 parts In-Stock

1+ parts

$0.434

100+ parts

-

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-

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1,957

$0.434

-

-

-

Nova Conductors

Japan . 10 parts In-Stock

1+ parts

$0.663

100+ parts

-

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-

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10

$0.663

-

-

-

Flip Electronics

USA . 11,900 parts In-Stock

1+ parts

-

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11,900

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-

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Vyrian

USA . 1,667 parts In-Stock

1+ parts

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1,667

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-

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VNN

France . 120 parts In-Stock

1+ parts

-

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120

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-

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 42 parts In-Stock

1+ parts

$0.317

100+ parts

-

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-

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42

$0.317

-

-

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Ampacity Inc.

Singapore . 1,395 parts In-Stock

1+ parts

$0.388

100+ parts

-

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1,395

$0.388

-

-

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Corphita

USA . 802 parts In-Stock

1+ parts

$0.411

100+ parts

-

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802

$0.411

-

-

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Argo Parts USA

USA . 4,393 parts In-Stock

1+ parts

$0.640

100+ parts

-

1k+ parts

-

10k+ parts

$0.620

4,393

$0.640

-

-

$0.620

Aranea Global

USA . 100 parts In-Stock

1+ parts

$0.650

100+ parts

-

1k+ parts

$0.624

10k+ parts

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100

$0.650

-

$0.624

-

Continental Prestige Electronics

USA . 308 parts In-Stock

1+ parts

$0.702

100+ parts

$0.466

1k+ parts

$0.282

10k+ parts

$0.269

308

$0.702

$0.466

$0.282

$0.269

Advanced Electronics

New Zealand . 450 parts In-Stock

1+ parts

$1.573

100+ parts

$1.431

1k+ parts

$1.290

10k+ parts

-

450

$1.573

$1.431

$1.290

-

Authorized Procurement Solutions

USA . 7,000 parts In-Stock

1+ parts

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7,000

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Kulean Microsystems

USA . 6,675 parts In-Stock

1+ parts

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6,675

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SupplyDigital Components

Austria . 6,201 parts In-Stock

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6,201

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Lixinc

USA . 4,817 parts In-Stock

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4,817

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TANS Electronics

Latvia . 4,814 parts In-Stock

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4,814

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Problanco Electronics

Mexico . 4,459 parts In-Stock

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4,459

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Kepictronics

USA . 1,400 parts In-Stock

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1,400

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Assy Fe

Spain . 1,400 parts In-Stock

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1,400

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UHIMA Technologies

Türkiye . 795 parts In-Stock

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795

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Overview

Discover the exceptional quality and reliability of the Onsemi 2SD1803T-TL-H Power Bipolar Junction Transistor. With a focus on performance and efficiency, this PNP transistor is designed for switching applications, offering a seamless solution for your power needs. Its small outline package and high collector current make it ideal for a wide range of electronic projects. Trust in Onsemi's reputation for excellence and innovation, and experience the value that the 2SD1803T-TL-H brings to your designs. Upgrade your circuits today with this top-of-the-line transistor!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and allows for compact designs.

Polarity or Channel Type: PNP

Suitable for applications requiring PNP transistors.

Transistor Application: SWITCHING

Ideal for switching applications where fast response times are needed.

Surface Mount: YES

Easy to mount on PCBs and saves space.

Maximum VCEsat: 0.55V

Low saturation voltage for efficient operation.

Maximum Power Dissipation (Abs): 20W

Can handle high power levels without overheating.

Minimum DC Current Gain (hFE): 35

Ensures reliable amplification of current.

Maximum Collector-Emitter Voltage: 50V

Suitable for applications requiring up to 50V voltage handling.

Maximum Collector Current (IC): 5A

Capable of handling high collector currents.

Nominal Transition Frequency (fT): 130MHz

Allows for high-frequency operation.

Technical Specifications

Power Bipolar Junction Transistors (BJT) 2SD1803T-TL-H attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

5 A

Maximum Collector-Base Capacitance:

60 pF

Maximum Collector-Emitter Voltage:

50 V

Configuration:

Minimum DC Current Gain (hFE):

35

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e6

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation Ambient:

1 W

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN BISMUTH

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.55 V

Trade Compliance

2SD1803T-TL-H Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.75

SB

8541.29.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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