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2SD1061S

Onsemi

2SD1061S by Onsemi

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 10 MHz; Maximum Collector Current (IC): 7 A; Terminal Finish: Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni);

Median Price

$0.699

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 1,340 parts In-Stock

1+ parts

-

100+ parts

$0.674

1k+ parts

$0.559

10k+ parts

$0.498

1,340

-

$0.674

$0.559

$0.498

DigiKey

USA . 1,340 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.840

10k+ parts

-

1,340

-

-

$0.840

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Verical

USA . 1,340 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.699

10k+ parts

$0.623

1,340

-

-

$0.699

$0.623

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 1,367 parts In-Stock

1+ parts

$0.452

100+ parts

-

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1,367

$0.452

-

-

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Digiode

USA . 2,456 parts In-Stock

1+ parts

$0.524

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-

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2,456

$0.524

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-

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DigiKey Marketplace

USA . 2,242 parts In-Stock

1+ parts

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2,242

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-

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 339 parts In-Stock

1+ parts

$0.452

100+ parts

-

1k+ parts

-

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339

$0.452

-

-

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Corphita

USA . 1,036 parts In-Stock

1+ parts

$0.497

100+ parts

-

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1,036

$0.497

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Microchip USA

USA . 5,756 parts In-Stock

1+ parts

$3.445

100+ parts

-

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5,756

$3.445

-

-

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QUARKTWIN TECHNOLOGY LTD

USA . 27,002 parts In-Stock

1+ parts

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27,002

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TANS Electronics

Latvia . 6,628 parts In-Stock

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6,628

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SupplyDigital Components

Austria . 6,345 parts In-Stock

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6,345

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Kulean Microsystems

USA . 4,426 parts In-Stock

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4,426

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Problanco Electronics

Mexico . 3,287 parts In-Stock

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3,287

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Continental Prestige Electronics

USA . 2,242 parts In-Stock

1+ parts

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100+ parts

$0.452

1k+ parts

-

10k+ parts

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2,242

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$0.452

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Northwest PG Solutions

USA . 740 parts In-Stock

1+ parts

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740

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UHIMA Technologies

Türkiye . 454 parts In-Stock

1+ parts

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454

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Native Components

USA . 268 parts In-Stock

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268

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Technical Specifications

Power Bipolar Junction Transistors (BJT) 2SD1061S attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

7 A

Maximum Collector-Emitter Voltage:

50 V

Configuration:

Minimum DC Current Gain (hFE):

140

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2SD1061S Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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