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2SD1508

Toshiba

2SD1508 by Toshiba

The Toshiba 2SD1508 is a NPN Darlington transistor with max VCEsat of 1.5V, hFE of 4000, and IC of 1.5A. Ideal for switching applications due to its high current gain and low collector-emitter saturation voltage. With a max power dissipation of 10W at ambient temperature, it's suitable for various power control circuits.

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Overview

Experience the superior quality and reliability of Toshiba with the 2SD1508 Power Bipolar Junction Transistor. Ideal for switching applications, this NPN Darlington transistor offers a maximum collector current of 1.5 A with a minimum DC current gain of 4000. With a maximum VCEsat of 1.5 V and a maximum operating temperature of 150°C, this transistor provides exceptional performance in a compact rectangular package. Trust Toshiba for cutting-edge technology and unparalleled value in electronic components.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is durable and resistant to heat, making the transistor reliable for long-term use.

Polarity or Channel Type: NPN

NPN transistors are commonly used in switching applications and offer high efficiency.

Configuration: DARLINGTON

Darlington configuration provides high current gain and allows for use in high-power switching applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring optimal performance in those scenarios.

Maximum VCEsat: 1.5 V

Low collector-emitter saturation voltage results in minimal power loss and efficient operation.

Package Shape: RECTANGULAR

Rectangular shape allows for easy mounting and integration into various electronic circuits.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide secure connections and ease of soldering during assembly.

No. of Terminals: 3

Simple 3-terminal design for easy connection and compatibility with standard circuits.

Maximum Power Dissipation (Abs): 1.2 W

High power dissipation capability ensures the transistor can handle demanding applications without overheating.

Package Style (Meter): FLANGE MOUNT

Flange mount style allows for easy installation and secure attachment to heat sinks for improved thermal management.

Maximum Power Dissipation Ambient: 10 W

With a high ambient power dissipation rating, this transistor can operate effectively in various environmental conditions.

Minimum DC Current Gain (hFE): 4000

High DC current gain ensures stable and reliable amplification in circuits where this transistor is used.

Maximum Operating Temperature: 150 °C

Wide operating temperature range allows for reliable performance in both low and high-temperature environments.

Maximum Collector-Emitter Voltage: 30 V

High collector-emitter voltage rating provides flexibility for use in a wide range of circuit designs.

Transistor Element Material: SILICON

Silicon material offers high thermal conductivity and low energy loss, making the transistor efficient and reliable.

Maximum Collector Current (IC): 1.5 A

With a high collector current rating, this transistor can handle a significant amount of current without saturation.

Terminal Position: SINGLE

Single terminal position simplifies the connection process and ensures proper orientation in circuit layouts.

Technical Specifications

Power Bipolar Junction Transistors (BJT) 2SD1508 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Toshiba

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

30 V

Configuration:

Minimum DC Current Gain (hFE):

4000

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

NPN

Maximum Power Dissipation Ambient:

10 W

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Maximum VCEsat:

1.5 V

Trade Compliance

2SD1508 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

Manufacturer Highlights

Toshiba

TOSHIBA, is a Japanese multinational conglomerate corporation headquartered in Minato, Tokyo, Japan. Its diversified products and services include power, industrial and social infrastructure systems, elevators and escalators, electronic components, semiconductors, hard disk drives (HDD), printers, batteries, lighting, as well as IT solutions such as quantum cryptography which has been in development at Cambridge Research Laboratory, Toshiba Europe, located in the United Kingdom, now being commercialised.It was one of the biggest manufacturers of personal computers, consumer electronics, home appliances, and medical equipment. As a semiconductor company and the inventor of flash memory, Toshiba had been one of the top 10 in the chip industry until its flash memory unit was spun off as Toshiba Memory, later Kioxia, in the late 2010s.

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