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2SD1897

ROHM

2SD1897 by ROHM

ROHM's 2SD1897 is a NPN BJT transistor with max. power dissipation of 30W, hFE of 60, and VCE of 100V. Ideal for amplifier applications due to its high collector current (IC) of 5A and transition frequency (fT) of 8MHz in a flange mount package.

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Overview

Upgrade your amplifier projects with the high-quality 2SD1897 power transistor from ROHM. Known for its reliable performance and durability, ROHM delivers top-notch products that meet the demands of various applications. The NPN configuration ensures seamless integration into your designs, while the maximum collector-emitter voltage of 100V allows for flexibility in usage. With a maximum power dissipation of 30W, this transistor is a powerhouse that will enhance the efficiency and effectiveness of your circuits. Trust ROHM to provide you with the tools you need to take your projects to the next level.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material offers good durability and protection for the transistor, ensuring longevity and reliability.

Polarity or Channel Type: NPN

NPN configuration allows for easy integration into various circuit designs, making it versatile for different applications.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, ensuring optimal performance and efficiency in amplifying signals.

Maximum Power Dissipation (Abs): 30 W

High power dissipation capability allows for handling higher power levels without overheating, making it suitable for demanding applications.

Minimum DC Current Gain (hFE): 60

High DC current gain ensures efficient signal amplification and improves overall performance of the transistor.

Maximum Collector-Emitter Voltage: 100 V

With a high collector-emitter voltage rating, this transistor can handle higher voltages, making it suitable for a wide range of applications.

Maximum Collector Current (IC): 5 A

High collector current rating allows for handling larger currents, making it suitable for applications with higher power requirements.

Nominal Transition Frequency (fT): 8 MHz

High transition frequency ensures fast signal switching and response time, making it ideal for high-frequency applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) 2SD1897 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from ROHM

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

5 A

Maximum Collector-Emitter Voltage:

100 V

Configuration:

Minimum DC Current Gain (hFE):

60

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2SD1897 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

ROHM

Rohm Co Ltd is a Japan-based company that manufactures and distributes electronic components for use in automotive, transportation, medical, healthcare, audiovisual, telecommunications, digital power, computer and peripherals, and home appliance end markets. Its product portfolio includes integrated circuits in memory, amplifiers, switches, data converters, and microcontrollers; discrete semiconductors, such as transistors and diodes; power devices; passive devices, such as resistors and capacitors; and optoelectronic devices.

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