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ROHM Power Bipolar Junction Transistors (BJT) 4

Power Bipolar Junction Transistors (BJT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Maximum Fall Time (tf) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
2SD2211T100/Q by ROHM

2SD2211T100/Q

ROHM

ROHM 2SD2211T100/Q is a NPN BJT with VCEsat of 2V, hFE of 120, and IC of 1.5A. Ideal for power applications in small outline packages due to its high transition frequency of 80MHz and low collector-base capacitance of 20pF. Suitable for surface mount designs requiring compact solutions with a max operating temperature of 150°C.

COLLECTOR

1.5 A

20 pF

160 V

SINGLE

120

R-PSSO-F3

e2

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

2 W

Not Qualified

YES

Tin/Copper (Sn/Cu)

FLAT

SINGLE

10

SILICON

80 MHz

2 V

2SD2396K by ROHM

2SD2396K

ROHM

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 40 MHz; Maximum Power Dissipation (Abs): 30 W; Maximum Collector Current (IC): 3 A;

ISOLATED

3 A

60 V

SINGLE

1000

TO-220AB

R-PSFM-T3

1

3

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

NPN

30 W

Not Qualified

Other Transistors

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

AMPLIFIER

SILICON

40 MHz

BA12003B by ROHM

BA12003B

ROHM

ROHM's BA12003B is a NPN BJT transistor with hFE of 1000, VCE of 55V, and IC of 0.35A. Ideal for switching applications due to its complex configuration. Comes in a rectangular package with 16 terminals for through-hole mounting.

.35 A

55 V

COMPLEX

1000

R-PDIP-T16

7

16

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

NOT SPECIFIED

NPN

Not Qualified

NO

THROUGH-HOLE

DUAL

NOT SPECIFIED

SWITCHING

SILICON

2SAR587D3TL1 by ROHM

2SAR587D3TL1

ROHM

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): 10 W; Maximum Collector Current (IC): 3 A;

COLLECTOR

3 A

65 pF

120 V

SINGLE

120

TO-252

R-PSSO-G2

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

PNP

10 W

YES

GULL WING

SINGLE

NOT SPECIFIED

AMPLIFIER

SILICON

250 MHz

.2 V