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2SD2211T100/Q

ROHM

2SD2211T100/Q by ROHM

ROHM 2SD2211T100/Q is a NPN BJT with VCEsat of 2V, hFE of 120, and IC of 1.5A. Ideal for power applications in small outline packages due to its high transition frequency of 80MHz and low collector-base capacitance of 20pF. Suitable for surface mount designs requiring compact solutions with a max operating temperature of 150°C.

Median Price

$1.330

Lifecycle Status

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4

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1k+

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DigiKey

USA . 22 parts In-Stock

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$1.330

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$0.553

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$0.430

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Vyrian

USA . 5,697 parts In-Stock

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VNN

France . 827 parts In-Stock

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Nova Conductors

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Ampacity Inc.

Singapore . 271 parts In-Stock

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Microchip USA

USA . 320 parts In-Stock

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$2.310

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$2.290

320

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Kepictronics

USA . 28,632 parts In-Stock

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Authorized Procurement Solutions

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Aranea Global

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Perfect Parts

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Overview

Power up your projects with the 2SD2211T100/Q by ROHM, a high-quality NPN Power Bipolar Junction Transistor designed to deliver reliable performance in a variety of applications. With a maximum collector-emitter voltage of 160V and a maximum collector current of 1.5A, this transistor is perfect for power control and amplification tasks. Its small outline package style makes it easy to integrate into your designs while its maximum operating temperature of 150°C ensures durability. Trust ROHM's expertise in semiconductor manufacturing to provide you with a top-notch product that will exceed your expectations. Elevate your projects with the 2SD2211T100/Q today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides good insulation properties and mechanical strength, ensuring reliability and durability of the transistor.

Polarity or Channel Type: NPN

NPN type transistors are commonly used in amplification circuits, making this transistor suitable for a wide range of applications.

Maximum VCEsat: 2 V

Low VCEsat value indicates minimal voltage drop across the collector-emitter junction, leading to higher efficiency and lower power dissipation.

Maximum Power Dissipation (Abs): 2 W

High power dissipation capability allows the transistor to handle a significant amount of power, making it suitable for high-power applications.

Minimum DC Current Gain (hFE): 120

High DC current gain indicates good signal amplification capability, ensuring accurate and efficient signal processing.

Maximum Collector-Emitter Voltage: 160 V

High collector-emitter voltage rating allows the transistor to withstand higher voltage levels, making it suitable for high-voltage circuits.

Maximum Collector Current (IC): 1.5 A

High collector current rating indicates the transistor's ability to handle large currents, making it suitable for high-power applications.

Nominal Transition Frequency (fT): 80 MHz

High transition frequency indicates good high-frequency performance, making the transistor suitable for high-speed applications such as RF amplifiers.

Technical Specifications

Power Bipolar Junction Transistors (BJT) 2SD2211T100/Q attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from ROHM

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

20 pF

Maximum Collector-Emitter Voltage:

160 V

Configuration:

Minimum DC Current Gain (hFE):

120

JESD-30 Code:

R-PSSO-F3

JESD-609 Code:

e2

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

2 W

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Finish:

Tin/Copper (Sn/Cu)

Terminal Form:

FLAT

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

10

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

2 V

Trade Compliance

2SD2211T100/Q Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

ROHM

Rohm Co Ltd is a Japan-based company that manufactures and distributes electronic components for use in automotive, transportation, medical, healthcare, audiovisual, telecommunications, digital power, computer and peripherals, and home appliance end markets. Its product portfolio includes integrated circuits in memory, amplifiers, switches, data converters, and microcontrollers; discrete semiconductors, such as transistors and diodes; power devices; passive devices, such as resistors and capacitors; and optoelectronic devices.

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