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2SD2281R

Onsemi

2SD2281R by Onsemi

The Onsemi 2SD2281R is a NPN BJT transistor with max. Vce of 50V and max. Ic of 12A, ideal for switching applications. It has a min hFE of 100 and fT of 10MHz, making it suitable for high-speed operations in various electronic circuits. The package style is flange mount with through-hole terminals, providing ease of installation and connection.

Median Price

$1.235

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 5,312 parts In-Stock

1+ parts

-

100+ parts

$1.190

1k+ parts

$0.988

10k+ parts

$0.881

5,312

-

$1.190

$0.988

$0.881

DigiKey

USA . 5,312 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$1.490

10k+ parts

-

5,312

-

-

$1.490

-

Verical

USA . 4,555 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$1.235

10k+ parts

$1.101

4,555

-

-

$1.235

$1.101

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 143 parts In-Stock

1+ parts

$0.800

100+ parts

-

1k+ parts

-

10k+ parts

-

143

$0.800

-

-

-

Digiode

USA . 1,483 parts In-Stock

1+ parts

$0.926

100+ parts

-

1k+ parts

-

10k+ parts

-

1,483

$0.926

-

-

-

DigiKey Marketplace

USA . 5,455 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,455

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 194 parts In-Stock

1+ parts

$0.800

100+ parts

-

1k+ parts

-

10k+ parts

-

194

$0.800

-

-

-

Corphita

USA . 2,404 parts In-Stock

1+ parts

$0.878

100+ parts

-

1k+ parts

-

10k+ parts

-

2,404

$0.878

-

-

-

Microchip USA

USA . 3,353 parts In-Stock

1+ parts

$6.110

100+ parts

-

1k+ parts

-

10k+ parts

-

3,353

$6.110

-

-

-

QUARKTWIN TECHNOLOGY LTD

USA . 28,541 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

28,541

-

-

-

-

Continental Prestige Electronics

USA . 5,455 parts In-Stock

1+ parts

-

100+ parts

$0.881

1k+ parts

-

10k+ parts

-

5,455

-

$0.881

-

-

SupplyDigital Components

Austria . 3,783 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,783

-

-

-

-

Kulean Microsystems

USA . 3,505 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

-

10k+ parts

-

3,505

-

-

-

-

Northwest PG Solutions

USA . 2,238 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

-

2,238

-

-

-

-

Problanco Electronics

Mexico . 1,849 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,849

-

-

-

-

TANS Electronics

Latvia . 1,294 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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1,294

-

-

-

-

Native Components

USA . 762 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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762

-

-

-

-

UHIMA Technologies

Türkiye . 385 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

385

-

-

-

-

Overview

Looking for a reliable and high-quality Power Bipolar Junction Transistor (BJT)? Look no further than the 2SD2281R by Onsemi! With a trusted manufacturer like Onsemi, you can expect nothing but top-notch performance and durability. Ideal for switching applications, this NPN transistor offers a maximum collector-emitter voltage of 50V and a maximum collector current of 12A. Whether you're a hobbyist or a professional, this transistor is sure to provide value and efficiency in your projects. Upgrade to the 2SD2281R today and experience the benefits for yourself!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the components inside, ensuring reliability and durability.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching applications, making this product versatile for various circuit designs.

Configuration: SINGLE

Simplified circuit design and easier implementation in applications where only one transistor is needed.

Transistor Application: SWITCHING

Optimized for switching applications, providing fast switching speeds and efficient signal control.

Package Shape: RECTANGULAR

Space-saving design for efficient PCB layout and assembly.

Terminal Form: THROUGH-HOLE

Easy to solder and secure onto a PCB, providing mechanical stability.

No. of Terminals: 3

Simplified connection options and reduced chances of miswiring.

Package Style (Meter): FLANGE MOUNT

Provides secure mounting and heat dissipation for reliable performance.

Minimum DC Current Gain (hFE): 100

Ensures consistent amplification of input signals for reliable circuit operation.

Maximum Collector-Emitter Voltage: 50 V

Can handle relatively high voltage levels, suitable for a wide range of applications.

Transistor Element Material: SILICON

Silicon transistors offer high performance and reliability for various electronic applications.

Maximum Collector Current (IC): 12 A

Capable of handling high current loads for power applications.

Terminal Finish: Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)

Provides good conductivity and corrosion resistance for reliable connections.

Terminal Position: SINGLE

Simplified soldering and connection process for easy integration into circuits.

Case Connection: ISOLATED

Helps prevent electrical interference and ensures stable operation in various circuit configurations.

Nominal Transition Frequency (fT): 10 MHz

Suitable for high-frequency signal processing applications, offering fast response times.

Technical Specifications

Power Bipolar Junction Transistors (BJT) 2SD2281R attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Configuration:

Minimum DC Current Gain (hFE):

100

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2SD2281R Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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