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2SD2462

Toshiba

2SD2462 by Toshiba

Toshiba's 2SD2462 is a NPN BJT transistor with max VCEsat of 1V, hFE of 350, and IC of 3A. Ideal for amplifier applications due to its high transition frequency of 18MHz and max power dissipation of 1.3W. Package style is in-line with through-hole terminals for easy installation.

Median Price

$4.900

Lifecycle Status

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1k+

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Forefront Electronics and Design

USA . 9 parts In-Stock

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Ampacity Inc.

Singapore . 1,220 parts In-Stock

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Overview

Elevate your electronic projects with the high-quality 2SD2462 Power Bipolar Junction Transistor by Toshiba. Known for their reliable and innovative technology, Toshiba delivers a product that exceeds expectations in amplifier applications. With a maximum collector-emitter voltage of 60V and a minimum DC current gain of 350, this NPN transistor offers outstanding performance. Whether you're a professional or hobbyist, the 2SD2462 provides value, durability, and efficiency in a compact rectangular package. Upgrade your circuits today with Toshiba's trusted components.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material makes the transistor lightweight and durable, suitable for a variety of applications.

Polarity or Channel Type: NPN

NPN configuration allows for easy integration into circuits and provides high current gain.

Configuration: SINGLE

Single configuration simplifies circuit design and makes the transistor easy to use.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, ensuring high performance in signal amplification.

Maximum VCEsat: 1 V

Low VCEsat value indicates minimal voltage drop across the collector-emitter junction, leading to efficient operation.

Package Shape: RECTANGULAR

Rectangular shape facilitates easy mounting and placement on circuit boards.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide a secure and reliable connection to the circuit.

Maximum Power Dissipation (Abs): 1.3 W

High power dissipation capability allows the transistor to handle higher loads without overheating.

Package Style (Meter): IN-LINE

In-line packaging simplifies the layout of the circuit board and conserves space.

Minimum DC Current Gain (hFE): 350

High minimum DC current gain ensures stable and consistent performance in amplification applications.

Maximum Operating Temperature: 150 °C

High maximum operating temperature makes the transistor suitable for use in a wide range of environments and conditions.

Maximum Collector-Emitter Voltage: 60 V

High collector-emitter voltage rating allows the transistor to handle higher voltages safely.

Transistor Element Material: SILICON

Silicon material offers excellent thermal properties and high reliability for long-term performance.

Maximum Collector Current (IC): 3 A

High collector current rating enables the transistor to handle larger currents efficiently.

Terminal Position: SINGLE

Single terminal position simplifies the connection process and reduces the risk of wiring errors.

Nominal Transition Frequency (fT): 18 MHz

High transition frequency allows for high-speed switching and signal processing capability.

Technical Specifications

Power Bipolar Junction Transistors (BJT) 2SD2462 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Toshiba

Specs

Maximum Collector Current (IC):

3 A

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

350

JESD-30 Code:

R-PSIP-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

1 V

Trade Compliance

2SD2462 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Toshiba

TOSHIBA, is a Japanese multinational conglomerate corporation headquartered in Minato, Tokyo, Japan. Its diversified products and services include power, industrial and social infrastructure systems, elevators and escalators, electronic components, semiconductors, hard disk drives (HDD), printers, batteries, lighting, as well as IT solutions such as quantum cryptography which has been in development at Cambridge Research Laboratory, Toshiba Europe, located in the United Kingdom, now being commercialised.It was one of the biggest manufacturers of personal computers, consumer electronics, home appliances, and medical equipment. As a semiconductor company and the inventor of flash memory, Toshiba had been one of the top 10 in the chip industry until its flash memory unit was spun off as Toshiba Memory, later Kioxia, in the late 2010s.

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