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2SD2101

Renesas Electronics

2SD2101 by Renesas Electronics

The Renesas Electronics 2SD2101 is a NPN BJT transistor with Darlington configuration and built-in resistor, ideal for amplifier applications. It offers a max power dissipation of 30W, min DC current gain of 1500, and can handle up to 10A collector current. Operating temperature up to 150°C makes it suitable for various electronic projects.

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Nova Conductors

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Vyrian

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Advanced Electronics

New Zealand . 2,000 parts In-Stock

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Corohmni

South Africa . 125 parts In-Stock

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Continental Prestige Electronics

USA . 3,173 parts In-Stock

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Glotronic Ltd.

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A-Z Elektronik GmbH

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Aranea Global

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Overview

Enhance your amplifier projects with the high-quality 2SD2101 Power BJT from Renesas Electronics. Known for their reliable and innovative technology, Renesas Electronics delivers top-notch components that guarantee exceptional performance. The 2SD2101 is a versatile NPN Darlington transistor with a built-in resistor, perfect for various amplifier applications. With a maximum power dissipation of 30W and a minimum DC current gain of 1500, this transistor offers unmatched efficiency and reliability. Upgrade your projects with the 2SD2101 and experience the superior quality and performance that Renesas Electronics has to offer.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good insulation and protection for the transistor, ensuring its durability and reliability.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits, making this transistor suitable for amplifier applications.

Configuration: DARLINGTON WITH BUILT-IN RESISTOR

The Darlington configuration offers high current gain, while the built-in resistor simplifies circuit design and saves space.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, ensuring optimal performance in amplification circuits.

Package Shape: RECTANGULAR

The rectangular shape allows for easy mounting and integration into circuit boards or systems.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide strong mechanical connections, making it easier to solder the transistor onto a PCB.

No. of Terminals: 3

Having 3 terminals simplifies circuit connections and reduces the likelihood of errors during installation.

Maximum Power Dissipation (Abs): 30 W

With a high power dissipation rating, this transistor can handle large amounts of power without overheating.

Package Style (Meter): FLANGE MOUNT

The flange mount style allows for secure and stable mounting, ideal for applications requiring a sturdy connection.

Minimum DC Current Gain (hFE): 1500

High DC current gain ensures efficient amplification and signal processing in amplifier circuits.

Maximum Operating Temperature: 150 °C

With a high operating temperature range, this transistor can withstand elevated temperatures without performance degradation.

Maximum Collector-Emitter Voltage: 200 V

The high maximum voltage rating allows for use in a variety of high-voltage applications without risk of damage.

Transistor Element Material: SILICON

Silicon is a common and reliable material for transistors, offering good conductivity and durability.

Maximum Collector Current (IC): 10 A

With a high collector current rating, this transistor can handle large current loads in amplifier circuits.

Terminal Position: SINGLE

A single terminal position simplifies circuit connections and ensures proper installation.

Case Connection: ISOLATED

Isolated case connection helps prevent electrical interference and ensures reliable performance in circuits.

Technical Specifications

Power Bipolar Junction Transistors (BJT) 2SD2101 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Renesas Electronics

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

200 V

Minimum DC Current Gain (hFE):

1500

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

2SD2101 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Renesas Electronics

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