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2SD2101

Hitachi

2SD2101 by Hitachi

NPN; Configuration: DARLINGTON WITH BUILT-IN RESISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 30 W; Maximum Collector Current (IC): 10 A; Transistor Element Material: SILICON;

Median Price

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Lifecycle Status

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2

In-Stock Inventory

1k+

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Nova Conductors

Japan . 1,000 parts In-Stock

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Vyrian

USA . 126 parts In-Stock

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126

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Advanced Electronics

New Zealand . 2,000 parts In-Stock

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$0.358

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$0.358

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$0.358

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2,000

$0.358

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Corohmni

South Africa . 125 parts In-Stock

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$1.749

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$1.749

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Continental Prestige Electronics

USA . 3,173 parts In-Stock

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3,173

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Glotronic Ltd.

UK . 2,500 parts In-Stock

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2,500

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A-Z Elektronik GmbH

Germany . 1,868 parts In-Stock

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Aranea Global

USA . 1,000 parts In-Stock

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Argo Parts USA

USA . 556 parts In-Stock

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556

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Assy Fe

Spain . 19 parts In-Stock

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Technical Specifications

Power Bipolar Junction Transistors (BJT) 2SD2101 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Hitachi

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

200 V

Minimum DC Current Gain (hFE):

1500

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

2SD2101 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

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