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2SD2390

Sanken Electric

2SD2390 by Sanken Electric

NPN; Configuration: DARLINGTON WITH BUILT-IN RESISTOR; Surface Mount: NO; Nominal Transition Frequency (fT): 55 MHz; Maximum Power Dissipation (Abs): 100 W; Maximum Collector Current (IC): 10 A;

Median Price

$2.837

Lifecycle Status

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15

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Chip1Stop

Japan . 260 parts In-Stock

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$4.140

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$1.900

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$1.570

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$1.470

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$4.140

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$1.470

Verical

USA . 240 parts In-Stock

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$1.534

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$1.505

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American Microsemiconductor Inc.

USA . 1 parts In-Stock

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Chip Stock

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Cyclops Electronics Ltd

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VNN

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Nova Conductors

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Micros

Poland . 89 parts In-Stock

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Fibra_Brandt Electronic GMBH

Germany . 53 parts In-Stock

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ACDS - Activité Composants Distribution Service

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Holdelec - ElecDif-Pro

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LittleDiode

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Component Stockers USA

USA . 13,895 parts In-Stock

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$0.970

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$0.920

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$0.850

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Aztec Data Supply Inc.

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$1.269

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Ampacity Inc.

Singapore . 251 parts In-Stock

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Microchip USA

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RC Electronics

USA . 30,000 parts In-Stock

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$1.650

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$1.560

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Kepictronics

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Continental Prestige Electronics

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Authorized Procurement Solutions

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Argo Parts USA

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Perfect Parts

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Aranea Global

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GreenTree Electronics

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Technical Specifications

Power Bipolar Junction Transistors (BJT) 2SD2390 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Sanken Electric

Specs

Additional Features:

BUILT-IN BIAS RESISTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

150 V

Minimum DC Current Gain (hFE):

5000

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2SD2390 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Sanken Electric

In 1937, as part of the 50th anniversary project of the former Toho Electric Power Co., Ltd., the Toho Industrial Research Institute was invited by the late Yasuzaemon Matsunaga, president of the company at the time, to develop industries that would actually benefit society. It was created with the intention of doing In 1946, the late Tetsuji Kotani, chief of the semiconductor research laboratory at the same research institute, established Toho Sanken Denki Co., Ltd., taking over the engineers and equipment of the research institute, which was dissolved after the end of the war. In 1962, the company name was changed to the current name, Sanken Electric Co., Ltd. Founded a factory specializing in semiconductors with the results of cuprous oxide and selenium rectifiers that have continued since the laboratory days. In 1958, we succeeded in making prototypes of thermal diffusion silicon diodes, which were groundbreaking in the world at the time, followed by silicon power transistors. Since then, we have grown together with the electronics industry, established a solid position as a manufacturer in the power electronics field, and grasped the changes of the times. We have provided solutions. We have been and will continue to supply unique and advanced products and strive to be a prominent innovator in the field of power electronics.

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