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2SD2499

Toshiba

2SD2499 by Toshiba

Toshiba's 2SD2499 is a NPN BJT transistor with built-in diode and resistor, ideal for amplifier applications. It offers a max VCEsat of 5V, can handle up to 6A collector current, and has a power dissipation of 50W. With a transition frequency of 2MHz and operating temperature up to 150°C, it ensures reliable performance in various electronic circuits.

Median Price

$11.400

Lifecycle Status

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American Microsemiconductor Inc.

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Nova Conductors

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Aztec Data Supply Inc.

USA . 2,773 parts In-Stock

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Corohmni

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AZTECH Wire

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Overview

Unlock the power of high-quality, reliable electronics with the Toshiba 2SD2499 Power Bipolar Junction Transistor. Manufactured by industry leader Toshiba, this NPN transistor is designed for amplifier applications, featuring a built-in diode and resistor for added convenience. With a maximum collector current of 6A and a maximum VCEsat of 5V, this transistor delivers exceptional performance and efficiency. Whether you're a hobbyist or a professional, the 2SD2499 offers value, reliability, and versatility for all your electronic projects. Choose Toshiba for superior quality and innovation in every component.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits, ensuring reliable performance in amplifier applications.

Configuration: SINGLE WITH BUILT-IN DIODE AND RESISTOR

The built-in diode and resistor simplify circuit design and implementation, saving time and effort for users.

Transistor Application: AMPLIFIER

Specifically designed for amplifier applications, ensuring optimized performance in amplification circuits.

Maximum VCEsat: 5 V

Low saturation voltage helps in reducing power losses and improving efficiency in the circuit.

Package Shape: RECTANGULAR

Rectangular shape allows for easy mounting and integration into circuit boards or systems.

Terminal Form: THROUGH-HOLE

Through-hole terminals offer secure and reliable connections for various circuit configurations.

No. of Terminals: 3

Simple 3-terminal configuration for easy interfacing with other components in the circuit.

Maximum Power Dissipation (Abs): 50 W

High power dissipation capability ensures the transistor can handle heavy loads and high-power applications.

Package Style (Meter): FLANGE MOUNT

Flange mount package style allows for easy mounting and heat dissipation, suitable for high-power applications.

Maximum Power Dissipation Ambient: 50 W

Can dissipate heat effectively in ambient conditions, ensuring stable operation under various environmental conditions.

Minimum DC Current Gain (hFE): 5

Sufficient DC current gain for reliable amplification and signal processing in amplifier circuits.

Maximum Operating Temperature: 150 °C

Wide operating temperature range allows for versatility in different operating environments.

Maximum Collector-Emitter Voltage: 600 V

High collector-emitter voltage rating provides protection against voltage spikes and overloads in the circuit.

Transistor Element Material: SILICON

Silicon-based construction offers high performance and reliability in various applications.

Maximum Collector Current (IC): 6 A

High collector current rating enables the transistor to handle large currents without damage.

Maximum Turn Off Time (toff): 12600 ns

Fast turn-off time ensures efficient switching and operation in dynamic circuit conditions.

Terminal Finish: TIN LEAD

Tin lead finish provides good solderability and ensures secure connections.

Terminal Position: SINGLE

Single terminal position simplifies installation and connection in the circuit.

Case Connection: ISOLATED

Isolated case connection helps in preventing short circuits and ensures safety in the circuit.

Nominal Transition Frequency (fT): 2 MHz

High transition frequency allows for fast signal processing and response in amplifier applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) 2SD2499 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Toshiba

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

6 A

Maximum Collector-Emitter Voltage:

600 V

Minimum DC Current Gain (hFE):

5

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation Ambient:

50 W

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum Turn Off Time (toff):

12600 ns

Maximum VCEsat:

5 V

Trade Compliance

2SD2499 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

Manufacturer Highlights

Toshiba

TOSHIBA, is a Japanese multinational conglomerate corporation headquartered in Minato, Tokyo, Japan. Its diversified products and services include power, industrial and social infrastructure systems, elevators and escalators, electronic components, semiconductors, hard disk drives (HDD), printers, batteries, lighting, as well as IT solutions such as quantum cryptography which has been in development at Cambridge Research Laboratory, Toshiba Europe, located in the United Kingdom, now being commercialised.It was one of the biggest manufacturers of personal computers, consumer electronics, home appliances, and medical equipment. As a semiconductor company and the inventor of flash memory, Toshiba had been one of the top 10 in the chip industry until its flash memory unit was spun off as Toshiba Memory, later Kioxia, in the late 2010s.

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