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2SD2391T100Q

ROHM

2SD2391T100Q by ROHM

ROHM 2SD2391T100Q is a NPN BJT transistor with VCEsat of 0.35V, hFE of 120, and IC of 2A. Ideal for amplifier applications due to its high transition frequency of 210MHz and max power dissipation of 2W in a small outline package.

Median Price

$0.600

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DigiKey

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$0.504

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Future Electronics

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Chip1Stop

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Verical

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Chip Stock

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NAC Semi

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IBS Electronics

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Cyclops Electronics Ltd

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Overview

Looking to amplify your electronics projects? Look no further than the 2SD2391T100Q by ROHM. As a leading manufacturer in power bipolar junction transistors, ROHM delivers top-notch quality and reliability. Whether you're working on an amplifier or another application, this NPN transistor offers high performance with a low saturation voltage, making it a valuable component for your designs. Trust ROHM to provide the quality and functionality you need to take your projects to the next level.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is known for its durability and heat resistance, making the transistor suitable for a variety of applications.

Polarity or Channel Type: NPN

NPN transistors are widely used in amplifier circuits due to their high input impedance and fast switching speeds.

Configuration: SINGLE

A single configuration simplifies circuit design and reduces complexity in the overall system.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, ensuring optimal performance and reliability in signal amplification.

Surface Mount: YES

Surface mount technology allows for easy integration onto PCBs, saving space and facilitating automated assembly processes.

Maximum VCEsat: 0.35 V

Low VCEsat minimizes power loss and improves efficiency in amplifier circuits.

Package Shape: RECTANGULAR

Rectangular shape is standardized and easy to handle during assembly and soldering processes.

No. of Terminals: 3

Limited number of terminals simplifies connection and reduces chances of wiring errors.

Package Style (Meter): SMALL OUTLINE

Small outline package saves space on PCB, allowing for compact circuit designs.

Minimum DC Current Gain (hFE): 120

High DC current gain ensures stable and consistent amplification of input signals.

Maximum Operating Temperature: 150 °C

High operating temperature range allows for versatile usage in different environmental conditions.

Maximum Collector-Emitter Voltage: 60 V

High collector-emitter voltage rating provides ample headroom for voltage spikes and ensures device reliability.

Transistor Element Material: SILICON

Silicon transistors offer good electrical performance characteristics and are widely used in semiconductor devices.

Maximum Collector Current (IC): 2 A

High collector current rating allows for handling larger currents, making it suitable for medium-power applications.

Terminal Finish: Tin/Copper (Sn/Cu)

Tin/copper finish provides good solderability and ensures a reliable electrical connection.

Terminal Position: SINGLE

Single terminal position simplifies mounting and connection procedures.

Case Connection: COLLECTOR

Collector case connection simplifies heat dissipation and thermal management.

Maximum Time At Peak Reflow Temperature (s): 10

Short reflow time prevents heat-induced damage to the transistor during soldering processes.

Peak Reflow Temperature °C: 260

High peak reflow temperature ensures proper soldering and mechanical strength of the joints.

Nominal Transition Frequency (fT): 210 MHz

High transition frequency enables fast signal switching and high-frequency performance in amplifier applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) 2SD2391T100Q attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from ROHM

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

2 A

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

120

JESD-30 Code:

R-PSSO-F3

JESD-609 Code:

e2

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

2 W

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

Tin/Copper (Sn/Cu)

Terminal Form:

FLAT

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

10

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.35 V

Trade Compliance

2SD2391T100Q Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

ROHM

Rohm Co Ltd is a Japan-based company that manufactures and distributes electronic components for use in automotive, transportation, medical, healthcare, audiovisual, telecommunications, digital power, computer and peripherals, and home appliance end markets. Its product portfolio includes integrated circuits in memory, amplifiers, switches, data converters, and microcontrollers; discrete semiconductors, such as transistors and diodes; power devices; passive devices, such as resistors and capacitors; and optoelectronic devices.

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