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2SD2081

Allegro MicroSystems

2SD2081 by Allegro MicroSystems

Allegro MicroSystems' 2SD2081 is a NPN BJT transistor with Darlington configuration and built-in resistor, ideal for switching applications. With VCEsat of 1.5V, hFE of 2000, and IC of 10A, it offers high performance in a rectangular package with through-hole terminals. Operating at up to 150°C, it can handle a max power dissipation of 30W making it suitable for various power control circuits.

Median Price

$1.428

Lifecycle Status

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2

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1k+

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Nova Conductors

Japan . 870 parts In-Stock

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$1.428

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870

$1.428

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Vyrian

USA . 829 parts In-Stock

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829

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Aranea Global

USA . 50 parts In-Stock

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$1.400

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$1.344

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50

$1.400

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$1.344

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AZTECH Wire

Italy . 754 parts In-Stock

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$7.113

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754

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QUARKTWIN TECHNOLOGY LTD

USA . 20,259 parts In-Stock

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20,259

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Perfect Parts

USA . 7,353 parts In-Stock

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7,353

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Glotronic Ltd.

UK . 2,900 parts In-Stock

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2,900

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Overview

Unleash the power of innovation with the 2SD2081 by Allegro MicroSystems. This high-quality Power Bipolar Junction Transistor (BJT) offers unrivaled performance and reliability in a compact and versatile package. Ideal for switching applications, this NPN transistor features a Darlington configuration with a built-in resistor, providing seamless operation and maximum efficiency. With a maximum VCEsat of 1.5V and a minimum DC current gain of 2000, this transistor delivers exceptional power dissipation and temperature tolerance. Trust Allegro MicroSystems to bring you cutting-edge technology that exceeds expectations. Experience the difference with the 2SD2081.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring reliable performance over time.

Polarity or Channel Type: NPN

NPN transistors are commonly used in switching applications, making this transistor versatile and suitable for various circuit designs.

Configuration: DARLINGTON WITH BUILT-IN RESISTOR

The Darlington configuration offers high current gain, while the built-in resistor simplifies circuit design and saves space.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient and reliable performance in such scenarios.

Maximum VCEsat: 1.5 V

Low VCEsat voltage helps minimize power dissipation and improves overall efficiency of the transistor.

Maximum Power Dissipation (Abs): 30 W

With a high absolute maximum power dissipation, this transistor can handle high-power applications without overheating.

Minimum DC Current Gain (hFE): 2000

High DC current gain ensures proper amplification and switching capabilities in various circuits.

Maximum Collector-Emitter Voltage: 120 V

Handles high voltage levels, making it suitable for a wide range of applications where high voltage is required.

Maximum Collector Current (IC): 10 A

With a high maximum collector current, this transistor can handle high current loads in switching applications.

Nominal Transition Frequency (fT): 60 MHz

High transition frequency enables fast switching speeds, making it ideal for high-frequency applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) 2SD2081 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Allegro MicroSystems

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

120 V

Minimum DC Current Gain (hFE):

2000

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation Ambient:

30 W

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

1.5 V

Trade Compliance

2SD2081 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.75

SB

8541.29.00.80

Manufacturer Highlights

Allegro MicroSystems

With more than 30 years of experience developing advanced semiconductor technology and application-specific algorithms, Allegro is a global leader in power and sensing solutions for motion control and energy-efficient systems. Through our innovations in e-Mobility, Clean Energy, and Automation, we are helping move the world toward a safer, more sustainable future. Each year we ship over one billion units into these applications to support our 10,000+ customers around the globe, including over 50 automotive OEMs. Our global engineering, manufacturing and support, combined with our agility, make Allegro a trusted partner to both large enterprises and regional market leaders worldwide.

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