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2SD2396

ROHM

2SD2396 by ROHM

ROHM 2SD2396 is a NPN BJT transistor with max. power dissipation of 30W, hFE of 400, and max. collector current of 3A. Ideal for amplifier applications due to its high transition frequency of 40MHz and max. collector-emitter voltage of 60V in a flange mount package style.

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Overview

Unlock the power of innovation with the ROHM 2SD2396 Power Bipolar Junction Transistor. Manufactured by industry leader ROHM, this NPN transistor offers high-quality performance and reliability for amplifier applications. With a maximum collector-emitter voltage of 60V and a minimum DC current gain of 400, this transistor is designed to deliver exceptional power dissipation and efficiency. Experience seamless integration and superior functionality with the 2SD2396, making it the perfect choice for your next project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring long-term reliability.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplifier circuits, making this transistor suitable for amplifier applications.

Configuration: SINGLE

Simplified setup and ease of use for single-transistor applications.

Transistor Application: AMPLIFIER

Specifically designed for amplification purposes, ensuring optimal performance in amplifier circuits.

Package Shape: RECTANGULAR

Allows for easy mounting and placement on circuit boards.

Terminal Form: THROUGH-HOLE

Facilitates easy soldering and connection to a circuit board.

No. of Terminals: 3

Standard number of terminals for basic transistor connections.

Maximum Power Dissipation (Abs): 30 W

Capable of handling high power dissipation, making it suitable for applications requiring high power output.

Package Style (Meter): FLANGE MOUNT

Allows for secure mounting and efficient heat dissipation.

Minimum DC Current Gain (hFE): 400

High DC current gain ensures efficient amplification in circuits.

Maximum Operating Temperature: 150 °C

Suitable for operation in a wide range of temperature conditions.

Maximum Collector-Emitter Voltage: 60 V

Can handle relatively high voltage levels, making it versatile for different applications.

Transistor Element Material: SILICON

Silicon transistors offer good performance characteristics and reliability.

Maximum Collector Current (IC): 3 A

Capable of handling moderate current levels in circuit applications.

Terminal Finish: TIN SILVER COPPER

Provides good conductivity and corrosion resistance for terminals.

Terminal Position: SINGLE

Simplified terminal configuration for easy connection in circuits.

Case Connection: ISOLATED

Provides electrical isolation for safer operation in circuits.

Nominal Transition Frequency (fT): 40 MHz

Suitable for high-frequency applications, such as radio frequency (RF) circuits.

Technical Specifications

Power Bipolar Junction Transistors (BJT) 2SD2396 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from ROHM

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

3 A

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

400

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2SD2396 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

ROHM

Rohm Co Ltd is a Japan-based company that manufactures and distributes electronic components for use in automotive, transportation, medical, healthcare, audiovisual, telecommunications, digital power, computer and peripherals, and home appliance end markets. Its product portfolio includes integrated circuits in memory, amplifiers, switches, data converters, and microcontrollers; discrete semiconductors, such as transistors and diodes; power devices; passive devices, such as resistors and capacitors; and optoelectronic devices.

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