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2SD1062S

Onsemi

2SD1062S by Onsemi

The Onsemi 2SD1062S is a NPN Power BJT with max. Vce of 50V and max. Ic of 12A. With hFE of 140, it's ideal for switching applications at a transition frequency of 10MHz. Its through-hole terminal form and flange mount package make it suitable for various electronic designs.

Median Price

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Lifecycle Status

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4

In-Stock Inventory

1k+

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ACDS - Activité Composants Distribution Service

France . 1,000 parts In-Stock

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Digiode

USA . 871 parts In-Stock

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Vyrian

USA . 830 parts In-Stock

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Prism Electronics

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Native Components

USA . 642 parts In-Stock

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$0.299

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Northwest PG Solutions

USA . 1,935 parts In-Stock

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SupplyDigital Components

Austria . 7,739 parts In-Stock

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Kulean Microsystems

USA . 5,501 parts In-Stock

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Problanco Electronics

Mexico . 5,205 parts In-Stock

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TANS Electronics

Latvia . 4,614 parts In-Stock

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Perfect Parts

USA . 2,240 parts In-Stock

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Cyclops Electronics Ltd (Excess)

UK . 2,215 parts In-Stock

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UHIMA Technologies

Türkiye . 688 parts In-Stock

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Corphita

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Corohmni

South Africa . 200 parts In-Stock

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Overview

Upgrade your power management system with the high-quality 2SD1062S by Onsemi. As a leading manufacturer in the industry, Onsemi delivers reliable and efficient Power Bipolar Junction Transistors (BJT) that are perfect for switching applications. With a maximum collector current of 12A and a nominal transition frequency of 10 MHz, this NPN transistor offers exceptional performance and durability. Whether you're looking to enhance your electronic devices or optimize your power circuits, the 2SD1062S provides unparalleled value and benefits for all your power management needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the transistor, ensuring longevity and reliability.

Polarity or Channel Type: NPN

Commonly used in most electronic circuits, making it compatible with a wide range of applications.

Configuration: SINGLE

Simplifies circuit design and makes installation easier.

Transistor Application: SWITCHING

Optimized for quick switching operations, making it suitable for efficient power control.

Package Shape: RECTANGULAR

Facilitates easy mounting and placement on circuit boards.

Terminal Form: THROUGH-HOLE

Enables secure and reliable connections to the circuit board.

No. of Terminals: 3

Simplifies circuit connections and reduces complexity.

Package Style (Meter): FLANGE MOUNT

Allows for easy and secure mounting in various applications.

Minimum DC Current Gain (hFE): 140

Ensures stable and consistent amplification of the input signal.

Maximum Collector-Emitter Voltage: 50 V

Can handle moderate voltage levels, suitable for a variety of applications.

Transistor Element Material: SILICON

Provides good thermal stability and high performance.

Maximum Collector Current (IC): 12 A

Capable of handling high currents, making it suitable for power applications.

Terminal Finish: Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)

Provides good conductivity and corrosion resistance for reliable connections.

Terminal Position: SINGLE

Simplifies circuit layout and reduces potential points of failure.

Nominal Transition Frequency (fT): 10 MHz

Allows for high-frequency operation, suitable for fast switching applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) 2SD1062S attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Configuration:

Minimum DC Current Gain (hFE):

140

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Surface Mount:

NO

Terminal Finish:

Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2SD1062S Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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