Loading...

2SD1062Q

Onsemi

2SD1062Q by Onsemi

The Onsemi 2SD1062Q is a NPN Power BJT with max. Vce of 50V and max. Ic of 12A. It has a min. hFE of 70, suitable for switching applications due to its high current capacity and fast transition frequency of 10MHz. The transistor comes in a plastic/epoxy package with through-hole terminals, making it ideal for flange mount configurations.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 1,723 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,723

-

-

-

-

Digiode

USA . 96 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

96

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 760 parts In-Stock

1+ parts

$1.400

100+ parts

-

1k+ parts

-

10k+ parts

-

760

$1.400

-

-

-

Northwest PG Solutions

USA . 2,251 parts In-Stock

1+ parts

$1.540

100+ parts

-

1k+ parts

-

10k+ parts

-

2,251

$1.540

-

-

-

Problanco Electronics

Mexico . 7,432 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

7,432

-

-

-

-

SupplyDigital Components

Austria . 5,848 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,848

-

-

-

-

Kulean Microsystems

USA . 3,328 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,328

-

-

-

-

TANS Electronics

Latvia . 1,967 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,967

-

-

-

-

Corphita

USA . 1,895 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,895

-

-

-

-

UHIMA Technologies

Türkiye . 784 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

784

-

-

-

-

Corohmni

South Africa . 447 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

447

-

-

-

-

Overview

Enhance your power electronics with the reliable 2SD1062Q by Onsemi. As a leading manufacturer in the industry, Onsemi ensures top-notch quality and performance in their Power Bipolar Junction Transistors (BJT). Ideal for switching applications, this NPN transistor offers a maximum collector-emitter voltage of 50V and a maximum collector current of 12A. With a minimum DC current gain of 70, this transistor provides efficient power management while maintaining stability. Upgrade your electronic projects with the trusted brand and superior functionality of Onsemi's 2SD1062Q.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and thermal properties, making the transistor more reliable and durable in various operating conditions.

Polarity or Channel Type: NPN

NPN transistors are commonly used for amplification and switching applications, ensuring versatility in circuit design.

Configuration: SINGLE

Simplifies circuit design and reduces component count for easier integration into electronic systems.

Transistor Application: SWITCHING

Optimized for high-speed switching applications, ensuring efficient operation in switching circuits.

Package Shape: RECTANGULAR

Facilitates easy mounting and heat dissipation, enhancing the overall performance of the transistor.

Terminal Form: THROUGH-HOLE

Allows for easy soldering onto circuit boards, making it suitable for through-hole assembly processes.

No. of Terminals: 3

Simplified pin configuration for straightforward connection in circuit layouts.

Package Style (Meter): FLANGE MOUNT

Enables secure and stable mounting of the transistor, suitable for industrial applications.

Minimum DC Current Gain (hFE): 70

Consistent and reliable amplification of current in the circuit for predictable performance.

Maximum Collector-Emitter Voltage: 50 V

Supports higher voltage applications, ensuring safe operation within specified voltage limits.

Transistor Element Material: SILICON

Silicon material provides good reliability and performance characteristics for the transistor.

Maximum Collector Current (IC): 12 A

Capable of handling high currents for power applications without thermal overload.

Terminal Position: SINGLE

Simplified connectivity for easier integration into circuit layouts.

Nominal Transition Frequency (fT): 10 MHz

High transition frequency enables fast switching speeds, suitable for high-frequency applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) 2SD1062Q attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Configuration:

Minimum DC Current Gain (hFE):

70

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2SD1062Q Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 20