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2SD1062R

Onsemi

2SD1062R by Onsemi

The Onsemi 2SD1062R is a NPN BJT transistor with max. Vce of 50V and max. Ic of 12A, ideal for switching applications. It has a min hFE of 100 and fT of 10MHz, making it suitable for high-frequency operations in various electronic circuits. The package style is flange mount with through-hole terminals, providing ease of installation and reliability in power systems.

Median Price

$0.918

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 16,403 parts In-Stock

1+ parts

-

100+ parts

$0.885

1k+ parts

$0.735

10k+ parts

$0.655

16,403

-

$0.885

$0.735

$0.655

DigiKey

USA . 16,403 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$1.110

10k+ parts

-

16,403

-

-

$1.110

-

Verical

USA . 16,403 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.918

10k+ parts

$0.819

16,403

-

-

$0.918

$0.819

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,325 parts In-Stock

1+ parts

$0.690

100+ parts

-

1k+ parts

-

10k+ parts

-

2,325

$0.690

-

-

-

Vyrian

USA . 1,458 parts In-Stock

1+ parts

$0.726

100+ parts

-

1k+ parts

-

10k+ parts

-

1,458

$0.726

-

-

-

Fibra_Brandt Electronic GMBH

Germany . 600 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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600

-

-

-

-

Prism Electronics

USA . 3 parts In-Stock

1+ parts

-

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-

1k+ parts

-

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3

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 716 parts In-Stock

1+ parts

$0.173

100+ parts

-

1k+ parts

-

10k+ parts

$0.166

716

$0.173

-

-

$0.166

Northwest PG Solutions

USA . 989 parts In-Stock

1+ parts

$0.190

100+ parts

-

1k+ parts

-

10k+ parts

$0.168

989

$0.190

-

-

$0.168

Corphita

USA . 758 parts In-Stock

1+ parts

$0.653

100+ parts

-

1k+ parts

-

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758

$0.653

-

-

-

Corohmni

South Africa . 174 parts In-Stock

1+ parts

$0.726

100+ parts

-

1k+ parts

-

10k+ parts

-

174

$0.726

-

-

-

Microchip USA

USA . 5,049 parts In-Stock

1+ parts

$4.550

100+ parts

-

1k+ parts

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5,049

$4.550

-

-

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QUARKTWIN TECHNOLOGY LTD

USA . 22,974 parts In-Stock

1+ parts

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100+ parts

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22,974

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Continental Prestige Electronics

USA . 16,403 parts In-Stock

1+ parts

-

100+ parts

$0.594

1k+ parts

-

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16,403

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$0.594

-

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Kulean Microsystems

USA . 7,675 parts In-Stock

1+ parts

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7,675

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SupplyDigital Components

Austria . 6,552 parts In-Stock

1+ parts

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100+ parts

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6,552

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Problanco Electronics

Mexico . 5,874 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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5,874

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-

-

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TANS Electronics

Latvia . 4,365 parts In-Stock

1+ parts

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100+ parts

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4,365

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-

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Glotronic Ltd.

UK . 1,970 parts In-Stock

1+ parts

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100+ parts

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1,970

-

-

-

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UHIMA Technologies

Türkiye . 580 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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580

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-

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Kepictronics

USA . 316 parts In-Stock

1+ parts

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316

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Assy Fe

Spain . 10 parts In-Stock

1+ parts

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10

-

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Perfect Parts

USA . 3 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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3

-

-

-

-

Overview

Looking to power up your electronic devices with reliability and efficiency? Look no further than the 2SD1062R by Onsemi. As a trusted manufacturer in the industry, Onsemi delivers top-quality Power Bipolar Junction Transistors that are perfect for switching applications. With a maximum collector-emitter voltage of 50V and a maximum collector current of 12A, this NPN transistor offers a seamless performance that will meet all your power needs. Upgrade your projects today with the 2SD1062R and experience the difference in quality and reliability.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the transistor, ensuring reliable performance.

Polarity or Channel Type: NPN

NPN transistors are commonly used for general purpose switching applications.

Configuration: SINGLE

Simplified design and ease of use for various applications.

Transistor Application: SWITCHING

Optimized for speedy switching operations, making it suitable for applications that require fast response times.

Package Shape: RECTANGULAR

Facilitates easy mounting and integration into circuit designs.

Terminal Form: THROUGH-HOLE

Provides secure and stable connections for reliability in circuit operation.

Package Style (Meter): FLANGE MOUNT

Enables easy and secure mounting on a flat surface.

Minimum DC Current Gain (hFE): 100

Ensures consistent and stable amplification of current in the circuit.

Maximum Collector-Emitter Voltage: 50 V

Suitable for low to medium voltage applications, providing a safety margin for voltage spikes.

Transistor Element Material: SILICON

Silicon transistors offer good performance and reliability in a wide range of operating conditions.

Maximum Collector Current (IC): 12 A

Capable of handling moderate to high current loads, making it versatile for various applications.

Terminal Finish: Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)

Provides good conductivity and corrosion resistance for long-term reliability.

Terminal Position: SINGLE

Simplified pin configuration for easy installation and connection.

Nominal Transition Frequency (fT): 10 MHz

Suitable for high-frequency switching applications, offering fast response times.

Technical Specifications

Power Bipolar Junction Transistors (BJT) 2SD1062R attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Configuration:

Minimum DC Current Gain (hFE):

100

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Surface Mount:

NO

Terminal Finish:

Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2SD1062R Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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