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2SD1047

STMicroelectronics

2SD1047 by STMicroelectronics

2SD1047 by STMicroelectronics is a NPN BJT transistor with 140V VCE, 12A IC, and 100W Ptot. Ideal for amplifier applications due to its high hFE of 50, it operates up to 150°C with a transition frequency of 20MHz. The package style is flange mount with matte tin finish in a rectangular shape.

Median Price

$3.404

Lifecycle Status

Suppliers In-Stock

21

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Element14

Singapore . 134 parts In-Stock

1+ parts

$3.404

100+ parts

$2.250

1k+ parts

$2.160

10k+ parts

$2.116

134

$3.404

$2.250

$2.160

$2.116

DigiKey

USA . 685 parts In-Stock

1+ parts

$4.040

100+ parts

$2.226

1k+ parts

$1.530

10k+ parts

$1.375

685

$4.040

$2.226

$1.530

$1.375

Farnell

UK . 7 parts In-Stock

1+ parts

$4.860

100+ parts

-

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-

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7

$4.860

-

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Distrelec

Netherlands . 29 parts In-Stock

1+ parts

$5.618

100+ parts

$3.354

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-

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29

$5.618

$3.354

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Arrow

USA . 240 parts In-Stock

1+ parts

-

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$1.847

10k+ parts

$1.738

240

-

-

$1.847

$1.738

Verical

USA . 240 parts In-Stock

1+ parts

-

100+ parts

$1.610

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-

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240

-

$1.610

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RS (Exports)

UK . 30 parts In-Stock

1+ parts

-

100+ parts

$3.182

1k+ parts

$2.834

10k+ parts

-

30

-

$3.182

$2.834

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

TME

Poland . 229 parts In-Stock

1+ parts

$1.650

100+ parts

$1.320

1k+ parts

$1.320

10k+ parts

$1.100

229

$1.650

$1.320

$1.320

$1.100

Nova Conductors

Japan . 87 parts In-Stock

1+ parts

$2.502

100+ parts

-

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-

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87

$2.502

-

-

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Digiode

USA . 1,407 parts In-Stock

1+ parts

$3.234

100+ parts

-

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1,407

$3.234

-

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Forefront Electronics and Design

USA . 2 parts In-Stock

1+ parts

$7.350

100+ parts

-

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2

$7.350

-

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American Microsemiconductor Inc.

USA . 4 parts In-Stock

1+ parts

$12.280

100+ parts

-

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4

$12.280

-

-

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Vyrian

USA . 5,632 parts In-Stock

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5,632

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VNN

France . 1,329 parts In-Stock

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1,329

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Anansix

USA . 454 parts In-Stock

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454

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LittleDiode

UK . 45 parts In-Stock

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45

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ACDS - Activité Composants Distribution Service

France . 20 parts In-Stock

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20

-

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Holdelec - ElecDif-Pro

France . 17 parts In-Stock

1+ parts

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17

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Fibra_Brandt Electronic GMBH

Germany . 7 parts In-Stock

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7

-

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Corel Iberica Componentes, S.L.

Spain . 3 parts In-Stock

1+ parts

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3

-

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ECAB

Sweden . 1 parts In-Stock

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1

-

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 2,062 parts In-Stock

1+ parts

$0.305

100+ parts

-

1k+ parts

$0.274

10k+ parts

-

2,062

$0.305

-

$0.274

-

MKK Technologies

India . 49 parts In-Stock

1+ parts

$0.573

100+ parts

-

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-

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49

$0.573

-

-

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DigiPath Technology Company

USA . 49 parts In-Stock

1+ parts

$0.573

100+ parts

-

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-

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49

$0.573

-

-

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Ampacity Inc.

Singapore . 93 parts In-Stock

1+ parts

$1.370

100+ parts

-

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93

$1.370

-

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Aranea Global

USA . 2,000 parts In-Stock

1+ parts

$2.452

100+ parts

-

1k+ parts

$2.354

10k+ parts

-

2,000

$2.452

-

$2.354

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Continental Prestige Electronics

USA . 4,154 parts In-Stock

1+ parts

$2.502

100+ parts

-

1k+ parts

-

10k+ parts

$2.452

4,154

$2.502

-

-

$2.452

Argo Parts USA

USA . 2,183 parts In-Stock

1+ parts

$2.502

100+ parts

-

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-

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2,183

$2.502

-

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Corphita

USA . 2,439 parts In-Stock

1+ parts

$3.064

100+ parts

-

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2,439

$3.064

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Component Stockers USA

USA . 522 parts In-Stock

1+ parts

$4.370

100+ parts

$2.970

1k+ parts

-

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522

$4.370

$2.970

-

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AZTECH Wire

Italy . 783 parts In-Stock

1+ parts

$9.409

100+ parts

-

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783

$9.409

-

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Metaverse IC Inc.

Canada . 90,000 parts In-Stock

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90,000

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QUARKTWIN TECHNOLOGY LTD

USA . 19,326 parts In-Stock

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19,326

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RC Electronics

USA . 13,744 parts In-Stock

1+ parts

-

100+ parts

$2.840

1k+ parts

$2.680

10k+ parts

$2.620

13,744

-

$2.840

$2.680

$2.620

Kepictronics

USA . 10,020 parts In-Stock

1+ parts

-

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10,020

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Microchip USA

USA . 7,795 parts In-Stock

1+ parts

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7,795

-

-

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Alle Elektronik GmbH

Germany . 2,079 parts In-Stock

1+ parts

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2,079

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-

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Glotronic Ltd.

UK . 1,970 parts In-Stock

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1,970

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-

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Authorized Procurement Solutions

USA . 1,000 parts In-Stock

1+ parts

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1,000

-

-

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Perfect Parts

USA . 744 parts In-Stock

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744

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GreenTree Electronics

Israel . 600 parts In-Stock

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600

-

-

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Parana Technologies

USA . 219 parts In-Stock

1+ parts

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100+ parts

$0.364

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219

-

$0.364

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Assy Fe

Spain . 3 parts In-Stock

1+ parts

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3

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Overview

Unlock the power of innovation with the STMicroelectronics 2SD1047 Power Bipolar Junction Transistor. Manufactured by industry leader STMicroelectronics, this NPN transistor is designed for amplifier applications, offering a maximum power dissipation of 100W and a maximum collector-emitter voltage of 140V. With a minimum DC current gain of 50 and a peak reflow temperature of 260°C, this transistor delivers exceptional performance and reliability. Whether you're building audio amplifiers or power supplies, the 2SD1047 provides unmatched quality and value for all your electronic projects. Step up your game with STMicroelectronics!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material provides durability and ensures reliable performance in various environmental conditions.

Polarity or Channel Type: NPN

The NPN configuration allows for easy integration into existing circuit designs, making it a versatile choice for amplifier applications.

Configuration: SINGLE

The single configuration simplifies circuit design and reduces complexity, making it easier to implement in amplifier circuits.

Transistor Application: AMPLIFIER

Specifically designed for amplifier applications, ensuring optimal performance and efficiency in amplifying signals.

Package Shape: RECTANGULAR

The rectangular package shape allows for easy mounting and installation in a variety of electronic devices.

Terminal Form: THROUGH-HOLE

The through-hole terminal form provides a secure connection for reliable circuit performance, especially in high-power applications.

No. of Terminals: 3

The three terminals offer flexibility in circuit design and allow for various connection options to meet specific application requirements.

Maximum Power Dissipation (Abs): 100 W

With a high maximum power dissipation, this transistor can handle high power levels, making it suitable for demanding amplifier applications.

Package Style (Meter): FLANGE MOUNT

The flange mount package style provides easy mounting and ensures a secure installation for stable performance.

Minimum DC Current Gain (hFE): 50

The minimum DC current gain of 50 ensures efficient signal amplification and reliable performance in amplifier circuits.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this transistor can withstand elevated temperatures, ensuring consistent performance in various environments.

Maximum Collector-Emitter Voltage: 140 V

The high maximum collector-emitter voltage allows for safe operation in high voltage applications, making it a reliable choice for amplifier circuits.

Transistor Element Material: SILICON

The use of silicon as the transistor element material ensures high performance and reliability, ideal for amplifier applications.

Maximum Collector Current (IC): 12 A

With a high maximum collector current, this transistor can handle high current levels, making it suitable for amplifier applications that require high power output.

Terminal Finish: MATTE TIN

The matte tin terminal finish provides a corrosion-resistant coating for enhanced durability and reliability in various operating conditions.

Terminal Position: SINGLE

The single terminal position simplifies circuit connections and ensures a secure fit in amplifier circuits.

Maximum Time At Peak Reflow Temperature (s): 30

The maximum time at peak reflow temperature of 30 seconds allows for efficient soldering, ensuring secure connections for reliable performance.

Peak Reflow Temperature °C: 260

With a high peak reflow temperature, this transistor can withstand the soldering process, ensuring stable performance during assembly.

Nominal Transition Frequency (fT): 20 MHz

The nominal transition frequency of 20 MHz indicates a high-speed response, making this transistor suitable for high-frequency amplifier applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) 2SD1047 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

140 V

Configuration:

Minimum DC Current Gain (hFE):

50

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2SD1047 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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