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2SD1897E

ROHM

2SD1897E by ROHM

ROHM's 2SD1897E is a NPN BJT with max. power dissipation of 30W, hFE of 100, and VCE of 100V. Ideal for switching applications due to its high collector current (IC) of 5A and transition frequency (fT) of 8MHz in a flange mount package.

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Overview

Unlock the power of innovation with the 2SD1897E by ROHM, a high-quality NPN Power BJT transistor that offers unmatched performance and reliability. Manufactured by ROHM, a trusted leader in semiconductor technology, this transistor is ideal for switching applications. With a maximum collector-emitter voltage of 100V and a maximum power dissipation of 30W, the 2SD1897E delivers exceptional efficiency and durability. Experience seamless operation and superior functionality with this advanced transistor, designed to meet all your power needs. Elevate your projects with the 2SD1897E - the ultimate choice for cutting-edge technology solutions.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material provides good insulation and protection for the transistor, making it durable and reliable in various operating conditions.

Polarity or Channel Type: NPN

NPN transistor configuration allows for easy integration into various electronic circuits for switching applications.

Configuration: SINGLE

Single configuration simplifies circuit design and ensures easy installation in electronic systems.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor offers high efficiency and fast response times.

No. of Terminals: 3

With 3 terminals, this transistor offers flexibility in circuit connection and integration.

Maximum Power Dissipation (Abs): 30 W

With a high maximum power dissipation rating, this transistor can handle high power loads effectively.

Maximum Collector-Emitter Voltage: 100 V

The high collector-emitter voltage rating allows for a wide range of voltage compatibility in various applications.

Maximum Collector Current (IC): 5 A

The high collector current rating of 5A enables the transistor to handle high current loads with ease.

Nominal Transition Frequency (fT): 8 MHz

The high nominal transition frequency of 8 MHz allows for fast switching speeds and reliable performance in high-frequency applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) 2SD1897E attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from ROHM

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

5 A

Maximum Collector-Emitter Voltage:

100 V

Configuration:

Minimum DC Current Gain (hFE):

100

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2SD1897E Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

ROHM

Rohm Co Ltd is a Japan-based company that manufactures and distributes electronic components for use in automotive, transportation, medical, healthcare, audiovisual, telecommunications, digital power, computer and peripherals, and home appliance end markets. Its product portfolio includes integrated circuits in memory, amplifiers, switches, data converters, and microcontrollers; discrete semiconductors, such as transistors and diodes; power devices; passive devices, such as resistors and capacitors; and optoelectronic devices.

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