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BD438TG

Onsemi

BD438TG by Onsemi

The Onsemi BD438TG is a PNP BJT with max power dissipation of 36W, hFE of 85, and IC of 4A. Ideal for applications requiring high-power amplification in temperature range -55 to 150°C. Suitable for single configuration setups needing reliable performance with fT of 3MHz.

Median Price

$0.290

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 2,550 parts In-Stock

1+ parts

$0.290

100+ parts

$0.280

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$0.280

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2,550

$0.290

$0.280

$0.280

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Distributors (In-Stock)

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Digiode

USA . 111 parts In-Stock

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$0.324

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111

$0.324

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Vyrian

USA . 12,767 parts In-Stock

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12,767

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Corphita

USA . 1,391 parts In-Stock

1+ parts

$0.307

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1,391

$0.307

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Corohmni

South Africa . 145 parts In-Stock

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$0.341

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145

$0.341

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AZTECH Wire

Italy . 1,207 parts In-Stock

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$15.090

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$15.090

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Kulean Microsystems

USA . 5,187 parts In-Stock

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5,187

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SupplyDigital Components

Austria . 4,890 parts In-Stock

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Problanco Electronics

Mexico . 4,832 parts In-Stock

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4,832

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TANS Electronics

Latvia . 4,775 parts In-Stock

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Microchip USA

USA . 3,272 parts In-Stock

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Native Components

USA . 671 parts In-Stock

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Northwest PG Solutions

USA . 502 parts In-Stock

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UHIMA Technologies

Türkiye . 167 parts In-Stock

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Overview

Unleash the power of innovation with the BD438TG by Onsemi, a high-quality PNP Power Bipolar Junction Transistor that delivers exceptional performance and reliability. Manufactured by industry leader Onsemi, this transistor is designed for a wide range of applications, offering customers unmatched value and benefits. With a maximum power dissipation of 36W and a minimum DC current gain of 85, the BD438TG provides superior performance in a compact and efficient package. Trust Onsemi to deliver cutting-edge technology that exceeds expectations.

Feature Benefit Bullets

Polarity or Channel Type: PNP

PNP transistors are commonly used in high-speed switching applications, making this product suitable for fast switching circuits.

Maximum Power Dissipation (Abs): 36 W

With a high power dissipation capacity, this transistor can handle larger loads without getting overheated, ensuring reliability in high-power applications.

Minimum DC Current Gain (hFE): 85

A high DC current gain ensures that the transistor amplifies the input signal efficiently, making it a reliable choice for signal amplification circuits.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature allows the transistor to withstand elevated temperatures, increasing its durability in harsh environments.

Minimum Operating Temperature: -55 °C

The wide range of operating temperatures makes this transistor suitable for use in both extreme cold and hot conditions.

Maximum Collector Current (IC): 4 A

The high maximum collector current rating makes this transistor suitable for applications requiring high output currents.

Terminal Finish: MATTE TIN

The matte tin terminal finish provides good solderability and corrosion resistance, ensuring reliable connections in circuit assemblies.

Nominal Transition Frequency (fT): 3 MHz

The high transition frequency allows this transistor to operate at high frequencies, making it suitable for high-speed RF and switching applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BD438TG attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

4 A

Configuration:

Minimum DC Current Gain (hFE):

85

JESD-609 Code:

e3

No. of Elements:

1

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Nominal Transition Frequency (fT):

Trade Compliance

BD438TG Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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