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BC640-016G

Onsemi

BC640-016G by Onsemi

BC640-016G by Onsemi is a PNP BJT with 3 terminals, max. power dissipation of 1.5W, and max. collector-emitter voltage of 80V. Ideal for applications requiring a min DC current gain of 25 (hFE), it operates at up to 150°C and has a nominal transition frequency of 150MHz.

Median Price

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Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

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Chip Stock

USA . 39,000 parts In-Stock

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Vyrian

USA . 10,359 parts In-Stock

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10,359

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VNN

France . 4,416 parts In-Stock

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Digiode

USA . 1,656 parts In-Stock

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Nova Conductors

Japan . 870 parts In-Stock

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870

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Distributors (Availability)

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Aztec Data Supply Inc.

USA . 3,939 parts In-Stock

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$0.950

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3,939

$0.950

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AZTECH Wire

Italy . 501 parts In-Stock

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$7.861

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501

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Ampacity Inc.

Singapore . 367 parts In-Stock

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$10.050

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367

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Component Stockers USA

USA . 611 parts In-Stock

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$99.990

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Perfect Parts

USA . 20,920 parts In-Stock

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SupplyDigital Components

Austria . 8,269 parts In-Stock

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Kulean Microsystems

USA . 7,440 parts In-Stock

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A-Z Elektronik GmbH

Germany . 6,699 parts In-Stock

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Continental Prestige Electronics

USA . 6,308 parts In-Stock

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Alle Elektronik GmbH

Germany . 4,466 parts In-Stock

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Argo Parts USA

USA . 2,295 parts In-Stock

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S.R.D Solutions

India . 2,000 parts In-Stock

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TANS Electronics

Latvia . 1,553 parts In-Stock

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Corphita

USA . 787 parts In-Stock

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Problanco Electronics

Mexico . 319 parts In-Stock

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Bastille Electronics

Australia . 120 parts In-Stock

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UHIMA Technologies

Türkiye . 120 parts In-Stock

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Corohmni

South Africa . 76 parts In-Stock

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Advanced Electronics

New Zealand . 54 parts In-Stock

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Kepictronics

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Overview

Enhance your electronic projects with the reliable BC640-016G Small Signal Bipolar Junction Transistor by Onsemi. Crafted with precision and expertise, this PNP transistor offers exceptional performance and durability in a variety of applications. With a maximum operating temperature of 150°C and a nominal transition frequency of 150 MHz, this transistor ensures seamless functionality and efficiency. Trust Onsemi's reputation for quality and innovation, and unlock endless possibilities for your projects with the BC640-016G. Experience superior performance and unmatched value with this top-of-the-line component.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good insulation and protection for the transistor, ensuring reliable performance.

Polarity or Channel Type: PNP

PNP transistors are commonly used in low-power applications, making this transistor suitable for small signal amplification.

Configuration: SINGLE

Single configuration makes it easy to integrate this transistor into various circuits without complex wiring.

Package Shape: ROUND

Round shape allows for easy mounting and installation in compact spaces.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide strong mechanical connections, ensuring stability in circuit connections.

No. of Terminals: 3

Three terminals offer flexibility in circuit design and connectivity options.

Maximum Power Dissipation (Abs): 1.5 W

High power dissipation capacity allows for reliable operation even in demanding applications.

Package Style (Meter): CYLINDRICAL

Cylindrical package style offers easy handling and mounting in various electronic devices.

Minimum DC Current Gain (hFE): 25

Having a minimum current gain of 25 ensures stable and predictable amplification in the circuit.

Maximum Operating Temperature: 150 °C

High maximum operating temperature allows for operation in a wide range of environments without performance degradation.

Maximum Collector-Emitter Voltage: 80 V

High collector-emitter voltage rating provides protection against voltage spikes and surges.

Transistor Element Material: SILICON

Silicon material offers good performance, reliability, and efficiency in transistor operation.

Maximum Collector Current (IC): 0.5 A

With a maximum collector current of 0.5 A, this transistor can handle moderate power requirements.

Terminal Finish: TIN SILVER COPPER

Quality terminal finish ensures good electrical conductivity and corrosion resistance.

Terminal Position: BOTTOM

Bottom terminal position makes it easy to solder and connect the transistor to the circuit board.

Peak Reflow Temperature °C: 260

High peak reflow temperature allows for robust soldering and assembly processes.

Nominal Transition Frequency (fT): 150 MHz

High transition frequency enables fast switching speeds and high-frequency signal amplification.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BC640-016G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

80 V

Configuration:

Minimum DC Current Gain (hFE):

25

JEDEC-95 Code:

TO-226AA

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BC640-016G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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