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BC857CE6327HTSA1

Infineon Technologies

BC857CE6327HTSA1 by Infineon Technologies

Infineon's BC857CE6327HTSA1 is a PNP BJT transistor with hFE of 420, Vce of 45V, and Ic of 0.1A. Ideal for switching applications, it operates at up to 150°C with a transition frequency of 250MHz. This surface-mount device has a gull wing terminal form in a small outline package.

Median Price

$0.219

Lifecycle Status

EOL

Suppliers In-Stock

20

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 1,045,647 parts In-Stock

1+ parts

$0.039

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$0.036

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$0.033

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1,045,647

$0.039

$0.036

$0.033

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Distrelec

Netherlands . 5,600 parts In-Stock

1+ parts

$0.372

100+ parts

$0.328

1k+ parts

$0.262

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5,600

$0.372

$0.328

$0.262

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Adafruit Industries

USA . 3,000 parts In-Stock

1+ parts

$1.681

100+ parts

$1.597

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$1.597

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3,000

$1.681

$1.597

$1.597

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Verical

USA . 510,000 parts In-Stock

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$0.047

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$0.047

Chip1Stop

Japan . 88,351 parts In-Stock

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$0.219

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$0.218

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$0.217

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$0.217

Arrow

USA . 30,000 parts In-Stock

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Distributors (In-Stock)

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Digiode

USA . 69 parts In-Stock

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$0.027

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69

$0.027

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Nova Conductors

Japan . 59 parts In-Stock

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$0.072

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59

$0.072

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Bristol Electronics

USA . 9,000 parts In-Stock

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$0.189

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$0.095

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$0.038

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$0.024

9,000

$0.189

$0.095

$0.038

$0.024

NAC Semi

USA . 282,000 parts In-Stock

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$0.087

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$0.087

Chip Stock

USA . 87,500 parts In-Stock

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Rutronik

Germany . 27,000 parts In-Stock

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Vyrian

USA . 10,990 parts In-Stock

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Dan-Mar Components

USA . 9,000 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 6,000 parts In-Stock

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IBS Electronics

USA . 6,000 parts In-Stock

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$0.051

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$0.051

VNN

France . 3,135 parts In-Stock

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TME

Poland . 1,950 parts In-Stock

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$0.051

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$0.041

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1,950

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$0.051

$0.041

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Rotakorn

Sweden . 1,795 parts In-Stock

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1,795

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ComSIT Distribution GmbH

Germany . 1,182 parts In-Stock

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Distributors (Availability)

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Ampacity Inc.

Singapore . 242,516 parts In-Stock

1+ parts

$0.024

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242,516

$0.024

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Semicontronic

India . 242,247 parts In-Stock

1+ parts

$0.024

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$0.023

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$0.023

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242,247

$0.024

$0.023

$0.023

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Corphita

USA . 515 parts In-Stock

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$0.025

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515

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Continental Prestige Electronics

USA . 6,795 parts In-Stock

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$0.059

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$0.058

6,795

$0.059

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$0.058

Argo Parts USA

USA . 4,988 parts In-Stock

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$0.059

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$0.057

4,988

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$0.057

Corohmni

South Africa . 820 parts In-Stock

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$0.845

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820

$0.845

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Modulus Dynamics

Lithuania . 21,997 parts In-Stock

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$1.170

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$1.123

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$1.076

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21,997

$1.170

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$1.076

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Aztec Data Supply Inc.

USA . 3,941 parts In-Stock

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$1.249

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$1.249

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Advanced Electronics

New Zealand . 3,000 parts In-Stock

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$1.681

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$1.597

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$1.597

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$1.681

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Eastek

USA . 465,000 parts In-Stock

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Perfect Parts

USA . 176,866 parts In-Stock

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RC Electronics

USA . 109,060 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 19,441 parts In-Stock

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A-Z Elektronik GmbH

Germany . 9,000 parts In-Stock

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Authorized Procurement Solutions

USA . 2,500 parts In-Stock

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2,500

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Netroflash

USA . 500 parts In-Stock

1+ parts

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$0.070

1k+ parts

$0.068

10k+ parts

$0.066

500

-

$0.070

$0.068

$0.066

Robosynatics

Brazil . 500 parts In-Stock

1+ parts

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$11.310

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$11.310

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$11.310

500

-

$11.310

$11.310

$11.310

Lucentia Tech

USA . 500 parts In-Stock

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$11.310

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$11.310

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$11.310

500

-

$11.310

$11.310

$11.310

Overview

Experience the superior quality and reliability of Infineon Technologies with the BC857CE6327HTSA1, a top-of-the-line Small Signal Bipolar Junction Transistor. Designed for switching applications, this PNP transistor offers unmatched performance in a compact, surface-mount package. With a minimum DC current gain of 420 and a maximum collector-emitter voltage of 45V, this transistor ensures optimal efficiency and precision in your designs. Trust in Infineon's expertise and innovation to elevate your projects to the next level with the BC857CE6327HTSA1.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the transistor, making it suitable for a variety of applications.

Polarity or Channel Type: PNP

The PNP configuration allows for easier integration into a circuit with other PNP components, enhancing compatibility and functionality.

Configuration: SINGLE

The single configuration simplifies circuit design and ensures straightforward installation and operation.

Transistor Application: SWITCHING

Specifically designed for switching applications, this transistor offers reliable and efficient performance in switching circuits.

Surface Mount: YES

The surface mount capability allows for easy and space-saving PCB assembly, making this transistor a suitable choice for compact designs.

Package Shape: RECTANGULAR

The rectangular shape of the package provides a compact and efficient footprint in the PCB layout for optimized space utilization.

Terminal Form: GULL WING

The gull wing terminal form facilitates easy soldering and connection, ensuring a secure and reliable electrical connection.

No. of Terminals: 3

With three terminals, this transistor offers flexibility in circuit design and configuration for versatile use in various applications.

Package Style (Meter): SMALL OUTLINE

The small outline package style allows for a compact and space-efficient design, ideal for applications with limited space constraints.

Minimum DC Current Gain (hFE): 420

The high minimum DC current gain ensures reliable and consistent amplification of the input signal, making it suitable for precise control applications.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this transistor can withstand elevated temperatures, ensuring stable performance in challenging environments.

Maximum Collector-Emitter Voltage: 45 V

The high maximum collector-emitter voltage rating makes this transistor suitable for applications requiring higher voltage handling capabilities.

Transistor Element Material: SILICON

The silicon material of the transistor element ensures reliable performance, high switching speed, and low power consumption for efficient operation.

Maximum Collector Current (IC): 0.1 A

The high maximum collector current rating allows for handling higher currents, making this transistor suitable for applications requiring higher power capabilities.

Terminal Finish: TIN

The tin terminal finish provides excellent conductivity and corrosion resistance for reliable electrical connections.

Terminal Position: DUAL

The dual terminal position offers flexibility in mounting and connection options, enhancing ease of installation and circuit integration.

Nominal Transition Frequency (fT): 250 MHz

With a high nominal transition frequency, this transistor is capable of handling high-speed switching applications with low signal distortion and improved performance.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BC857CE6327HTSA1 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Infineon Technologies

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

45 V

Configuration:

Minimum DC Current Gain (hFE):

420

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

PNP

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BC857CE6327HTSA1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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