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2SC2909S-AA

Onsemi

2SC2909S-AA by Onsemi

2SC2909S-AA by Onsemi is a NPN BJT transistor for switching applications. It has a low VCEsat of 0.3V, hFE of 140, and can handle up to 160V. With a max power dissipation of 0.6W, it operates at temperatures up to 150°C.

Median Price

$0.066

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 13,293 parts In-Stock

1+ parts

-

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$0.066

1k+ parts

$0.055

10k+ parts

$0.049

13,293

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$0.066

$0.055

$0.049

DigiKey

USA . 13,293 parts In-Stock

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$0.080

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$0.080

Verical

USA . 7,293 parts In-Stock

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$0.061

7,293

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$0.061

Distributors (In-Stock)

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Digiode

USA . 582 parts In-Stock

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$0.051

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582

$0.051

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Chip Stock

USA . 58,000 parts In-Stock

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Vyrian

USA . 11,715 parts In-Stock

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R&J Components

USA . 8,800 parts In-Stock

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Distributors (Availability)

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Corphita

USA . 143 parts In-Stock

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$0.049

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143

$0.049

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Corohmni

South Africa . 203 parts In-Stock

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$0.054

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203

$0.054

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Component Stockers USA

USA . 2,158 parts In-Stock

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$0.060

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$0.050

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$0.050

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$0.050

2,158

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$0.050

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$0.050

AZTECH Wire

Italy . 334 parts In-Stock

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$13.460

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334

$13.460

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Native Components

USA . 331 parts In-Stock

1+ parts

$270.976

100+ parts

$265.556

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$262.847

10k+ parts

$260.137

331

$270.976

$265.556

$262.847

$260.137

Northwest PG Solutions

USA . 2,256 parts In-Stock

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$298.073

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Kulean Microsystems

USA . 6,996 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 6,318 parts In-Stock

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TANS Electronics

Latvia . 5,358 parts In-Stock

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Authorized Procurement Solutions

USA . 3,000 parts In-Stock

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Continental Prestige Electronics

USA . 2,944 parts In-Stock

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$0.049

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Problanco Electronics

Mexico . 1,433 parts In-Stock

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SupplyDigital Components

Austria . 698 parts In-Stock

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698

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UHIMA Technologies

Türkiye . 243 parts In-Stock

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Microchip USA

USA . 199 parts In-Stock

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Overview

Looking for a high-quality Small Signal Bipolar Junction Transistor that delivers exceptional performance? Look no further than the 2SC2909S-AA by Onsemi. With a reputation for excellence, Onsemi is a trusted manufacturer known for producing top-of-the-line electronic components. The 2SC2909S-AA is perfect for switching applications, offering a low VCEsat of 0.3V and a DC current gain of 140. Its compact cylindrical package with through-hole terminals makes it easy to integrate into your projects. Trust Onsemi's 2SC2909S-AA for reliable performance and seamless operation in your next design.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides insulation and protection for the transistor, making it suitable for a wide range of applications.

Polarity or Channel Type: NPN

Commonly used type of transistor with versatile applications in electronics.

Configuration: SINGLE

Simplified setup for easier integration into circuits.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient performance in such scenarios.

Maximum VCEsat: 0.3 V

Low saturation voltage minimizes power loss and heat generation in the transistor.

Package Shape: ROUND

Compact round shape for easy mounting and space-saving designs.

Terminal Form: THROUGH-HOLE

Simplifies the process of soldering and connecting the transistor securely in a circuit.

Maximum Power Dissipation (Abs): 0.6 W

Can handle moderate power levels efficiently without risking damage to the transistor.

Package Style (Meter): CYLINDRICAL

Offers a neat and uniform appearance when mounted on a circuit board.

Maximum Power Dissipation Ambient: 0.6 W

Ensures stable operation even in varying temperature environments.

Minimum DC Current Gain (hFE): 140

Provides consistent and reliable amplification of current in the transistor.

Maximum Operating Temperature: 150 °C

Can withstand elevated temperatures, making it suitable for various operating conditions.

Maximum Collector-Base Capacitance: 2 pF

Low capacitance minimizes signal distortion in high-frequency applications.

Maximum Collector-Emitter Voltage: 160 V

Can handle relatively high voltages, expanding its range of applications.

Transistor Element Material: SILICON

Silicon-based material offers high performance and reliability in transistor operation.

Maximum Collector Current (IC): 0.07 A

Able to handle moderate current levels, suitable for a variety of circuits.

Terminal Finish: Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)

Durable terminal finish for long-lasting connections.

Terminal Position: BOTTOM

Facilitates easy mounting and connection in a circuit.

Nominal Transition Frequency (fT): 150 MHz

High transition frequency allows for fast switching and response times in electronic circuits.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2SC2909S-AA attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

2 pF

Maximum Collector-Emitter Voltage:

160 V

Configuration:

Minimum DC Current Gain (hFE):

140

JESD-30 Code:

O-PBCY-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Maximum Power Dissipation Ambient:

.6 W

Maximum Power Dissipation (Abs):

Surface Mount:

NO

Terminal Finish:

Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.3 V

Trade Compliance

2SC2909S-AA Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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