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2SC2240

Toshiba

2SC2240 by Toshiba

The Toshiba 2SC2240 is a NPN BJT transistor with max VCEsat of 0.3V, hFE of 200, and fT of 100MHz. Ideal for amplifier applications due to its low power dissipation (0.3W) and high collector-emitter voltage (120V). Package style is cylindrical with through-hole terminals.

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Bristol Electronics

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MISTER SPROCKETS

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Nova Conductors

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Donberg Electronics Ltd

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Corohmni

South Africa . 171 parts In-Stock

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Advanced Electronics

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Ampacity Inc.

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Argo Parts USA

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Overview

Enhance your electronic projects with the 2SC2240 by Toshiba, a high-quality Small Signal Bipolar Junction Transistor that delivers superior performance and reliability. Manufactured by industry leader Toshiba, this NPN transistor is perfect for amplifier applications, offering a maximum collector-emitter voltage of 120V and a minimum DC current gain of 200. With a maximum VCEsat of 0.3V and a maximum operating temperature of 125°C, the 2SC2240 provides exceptional value and benefits to customers seeking top-notch components for their designs. Upgrade your circuits today with the trusted quality of Toshiba's 2SC2240.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy body material provides good protection and durability to the transistor, making it suitable for various applications where reliability is key.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits due to their ease of use and versatility in different circuit configurations.

Configuration: SINGLE

The single configuration simplifies circuit designs and makes it easier to integrate this transistor into existing circuitry.

Transistor Application: AMPLIFIER

Designed specifically for amplification purposes, this transistor is optimized for providing gain in audio, radio frequency, or other signal amplification circuits.

Maximum VCEsat: 0.3 V

The low VCEsat value indicates minimal voltage drop across the collector-emitter junction when the transistor is saturated, resulting in efficient power output.

Package Shape: ROUND

The round package shape allows for easy mounting and installation in circular or cylindrical enclosures, maximizing space efficiency.

Terminal Form: THROUGH-HOLE

The through-hole terminal form provides a strong and reliable connection to the circuit board, ensuring stable performance in various operating conditions.

No. of Terminals: 3

The 3-terminal design simplifies circuit connections and enables easy integration into different circuit layouts.

Maximum Power Dissipation (Abs): 0.3 W

With a maximum power dissipation of 0.3 W, this transistor can handle moderate power levels without overheating or failing prematurely.

Package Style (Meter): CYLINDRICAL

The cylindrical package style provides a compact and uniform shape, making it suitable for applications where space is limited or where a streamlined design is desired.

Minimum DC Current Gain (hFE): 200

The high minimum DC current gain ensures consistent and stable amplification performance, even at low input signal levels.

Maximum Operating Temperature: 125 °C

With a maximum operating temperature of 125°C, this transistor can withstand high temperatures without sacrificing performance or reliability.

Maximum Collector-Emitter Voltage: 120 V

The high maximum collector-emitter voltage rating allows the transistor to handle high voltage signals or power levels without breakdown or damage.

Transistor Element Material: SILICON

Silicon transistors are known for their reliability, stability, and consistent performance over a wide range of operating conditions, making them a popular choice in electronic circuits.

Maximum Collector Current (IC): 0.1 A

With a maximum collector current rating of 0.1 A, this transistor can handle moderate current levels without overheating or causing performance issues.

Terminal Finish: Tin/Lead (Sn/Pb)

The tin/lead terminal finish provides a reliable and durable connection to the circuit board, ensuring long-term performance and stability.

Terminal Position: BOTTOM

The bottom terminal position simplifies circuit board layout and component placement, making it easier to design and assemble circuits using this transistor.

Nominal Transition Frequency (fT): 100 MHz

The high nominal transition frequency of 100 MHz indicates that this transistor can handle high-frequency signals with minimal distortion or signal loss, making it suitable for RF applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2SC2240 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Toshiba

Specs

Additional Features:

LOW NOISE

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

120 V

Configuration:

Minimum DC Current Gain (hFE):

200

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

125 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.3 V

Trade Compliance

2SC2240 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Toshiba

TOSHIBA, is a Japanese multinational conglomerate corporation headquartered in Minato, Tokyo, Japan. Its diversified products and services include power, industrial and social infrastructure systems, elevators and escalators, electronic components, semiconductors, hard disk drives (HDD), printers, batteries, lighting, as well as IT solutions such as quantum cryptography which has been in development at Cambridge Research Laboratory, Toshiba Europe, located in the United Kingdom, now being commercialised.It was one of the biggest manufacturers of personal computers, consumer electronics, home appliances, and medical equipment. As a semiconductor company and the inventor of flash memory, Toshiba had been one of the top 10 in the chip industry until its flash memory unit was spun off as Toshiba Memory, later Kioxia, in the late 2010s.

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