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2SC2712-Y,LF(B

Toshiba

2SC2712-Y,LF(B by Toshiba

The Toshiba 2SC2712-Y,LF(B is a NPN BJT transistor with max VCEsat of 0.25V and hFE of 120. Ideal for amplifier applications, it has a max IC of 0.15A, fT of 80MHz, and operates up to 125°C. With GULL WING terminals in a SMALL OUTLINE package, it offers high performance in compact designs.

Median Price

$0.130

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Verical

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Overview

Discover the exceptional quality and performance of Toshiba's 2SC2712-Y,LF(B Small Signal Bipolar Junction Transistor. This NPN transistor is perfect for amplifier applications, offering a maximum VCEsat of 0.25V and a minimum DC current gain of 120. With a peak reflow temperature of 260°C and a maximum collector-emitter voltage of 50V, this transistor delivers reliable and efficient operation. Trust Toshiba's reputation for innovation and excellence to provide you with the best in electronic components. Elevate your projects with the superior value and benefits of the 2SC2712-Y,LF(B.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits, making this transistor suitable for amplifier applications.

Configuration: SINGLE

Simplifies circuit design and makes it easy to use in amplifier applications.

Transistor Application: AMPLIFIER

Specifically designed for amplifier applications, ensuring optimal performance in such use cases.

Surface Mount: YES

Allows for easy and compact PCB mounting, making it suitable for modern electronics designs.

Maximum VCEsat: 0.25 V

Low VCEsat minimizes power loss and improves efficiency in amplifier circuits.

Terminal Form: GULL WING

Facilitates easy soldering during PCB assembly, ensuring reliable connections.

No. of Terminals: 3

Simple and efficient 3-terminal design for easy integration into circuit layouts.

Maximum Power Dissipation (Abs): 0.15 W

Efficient power handling capability suitable for low power amplifier applications.

Maximum Power Dissipation Ambient: 0.15 W

Can dissipate heat effectively in various environmental conditions, ensuring reliable operation.

Minimum DC Current Gain (hFE): 120

High DC current gain ensures accurate and stable amplification of signals.

Maximum Operating Temperature: 125 °C

Can operate reliably at high temperatures, expanding its applicability in different environments.

Maximum Collector-Base Capacitance: 3.5 pF

Low capacitance minimizes signal distortion and ensures high-frequency performance.

Maximum Collector-Emitter Voltage: 50 V

Adequate voltage rating for amplifier circuits, ensuring safe operation.

Transistor Element Material: SILICON

Silicon is a common and reliable semiconductor material for transistors, ensuring high performance and durability.

Maximum Collector Current (IC): 0.15 A

Sufficient current handling capacity for amplifier applications, ensuring proper signal amplification.

Terminal Position: DUAL

Dual terminal configuration for easy connection in circuits, enhancing usability.

Peak Reflow Temperature °C: 260

Can withstand high reflow temperatures during assembly processes, ensuring reliability.

Nominal Transition Frequency (fT): 80 MHz

High transition frequency allows for amplification of high-frequency signals accurately.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2SC2712-Y,LF(B attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Toshiba

Specs

Additional Features:

LOW NOISE

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

3.5 pF

Maximum Collector-Emitter Voltage:

50 V

Configuration:

Minimum DC Current Gain (hFE):

120

JESD-30 Code:

R-PDSO-G3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

125 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation Ambient:

.15 W

Maximum Power Dissipation (Abs):

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.25 V

Trade Compliance

2SC2712-Y,LF(B Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.21.00.95

SB

8541.21.00.80

PCN

Manufacturer Highlights

Toshiba

TOSHIBA, is a Japanese multinational conglomerate corporation headquartered in Minato, Tokyo, Japan. Its diversified products and services include power, industrial and social infrastructure systems, elevators and escalators, electronic components, semiconductors, hard disk drives (HDD), printers, batteries, lighting, as well as IT solutions such as quantum cryptography which has been in development at Cambridge Research Laboratory, Toshiba Europe, located in the United Kingdom, now being commercialised.It was one of the biggest manufacturers of personal computers, consumer electronics, home appliances, and medical equipment. As a semiconductor company and the inventor of flash memory, Toshiba had been one of the top 10 in the chip industry until its flash memory unit was spun off as Toshiba Memory, later Kioxia, in the late 2010s.

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