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2SC2713-GRLF(T

Toshiba

2SC2713-GRLF(T by Toshiba

2SC2713-GRLF(T by Toshiba is a NPN BJT transistor with max VCEsat of 0.3V, hFE of 200, and fT of 100MHz. Ideal for amplifier applications due to its small outline package style and max collector current of 0.1A. Suitable for surface mount designs with gull wing terminals in a plastic/epoxy body.

Median Price

$0.130

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Newark

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$0.283

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$0.092

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$0.074

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Arrow

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Farnell

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$0.578

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$0.388

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$0.343

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Element14

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$0.130

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$0.084

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$0.083

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Verical

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Chip1Stop

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TME

Poland . 5,300 parts In-Stock

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$0.060

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$0.056

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Perfect Parts

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Overview

Discover the Toshiba 2SC2713-GRLF(T, a high-quality Small Signal Bipolar Junction Transistor designed for amplifier applications. With its NPN configuration and maximum power dissipation of 0.15W, this transistor offers reliable performance and efficiency. Made by Toshiba, a trusted manufacturer known for top-notch electronic components, this transistor is perfect for amplifying signals with ease. Its compact package style and gull wing terminals make it easy to integrate into your electronic projects. Experience the value and benefits of the 2SC2713-GRLF(T and take your amplifier designs to the next level with Toshiba's superior technology.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material makes the package lightweight and durable, ideal for portable electronic devices.

Polarity or Channel Type: NPN

NPN type allows for easy integration into common amplifier circuits, making it versatile for various applications.

Configuration: SINGLE

Single configuration simplifies circuit design and reduces complexity in the overall system.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, ensuring optimal performance in amplifying signals.

Surface Mount: YES

Surface mount capability allows for easy installation on printed circuit boards, saving space and improving efficiency.

Maximum VCEsat: 0.3 V

Low VCEsat value minimizes power loss in the transistor, improving overall efficiency of the amplifier circuit.

Package Shape: RECTANGULAR

Rectangular shape enables easy placement and alignment during assembly, ensuring a secure fit on the PCB.

Terminal Form: GULL WING

Gull wing terminals provide strong mechanical connection and are suitable for automated soldering processes.

No. of Terminals: 3

3 terminals offer simplified connectivity and compatibility with standard electrical connections.

Maximum Power Dissipation (Abs): 0.15 W

Low power dissipation ensures the transistor operates within safe temperature limits, enhancing reliability.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space and allows for high-density mounting on the PCB.

Maximum Power Dissipation Ambient: 0.15 W

Same value as absolute maximum power dissipation ensures reliable operation under varying ambient conditions.

Minimum DC Current Gain (hFE): 200

High DC current gain provides sufficient signal amplification, improving the overall performance of the amplifier.

Maximum Operating Temperature: 125 °C

High operating temperature range allows for reliable operation in harsh environmental conditions.

Maximum Collector-Emitter Voltage: 120 V

High collector-emitter voltage rating provides safety margin for voltage spikes and transient conditions.

Transistor Element Material: SILICON

Silicon material offers high performance and reliability as the base material for the transistor element.

Maximum Collector Current (IC): 0.1 A

High collector current rating allows for handling higher current loads in the circuit.

Terminal Position: DUAL

Dual terminal position facilitates easy and secure connection to external components.

Nominal Transition Frequency (fT): 100 MHz

High transition frequency allows for fast switching speeds and high-frequency operation in amplifier circuits.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2SC2713-GRLF(T attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Toshiba

Specs

Additional Features:

LOW NOISE

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

120 V

Configuration:

Minimum DC Current Gain (hFE):

200

JESD-30 Code:

R-PDSO-G3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

125 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

NPN

Maximum Power Dissipation Ambient:

.15 W

Maximum Power Dissipation (Abs):

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.3 V

Trade Compliance

2SC2713-GRLF(T Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Toshiba

TOSHIBA, is a Japanese multinational conglomerate corporation headquartered in Minato, Tokyo, Japan. Its diversified products and services include power, industrial and social infrastructure systems, elevators and escalators, electronic components, semiconductors, hard disk drives (HDD), printers, batteries, lighting, as well as IT solutions such as quantum cryptography which has been in development at Cambridge Research Laboratory, Toshiba Europe, located in the United Kingdom, now being commercialised.It was one of the biggest manufacturers of personal computers, consumer electronics, home appliances, and medical equipment. As a semiconductor company and the inventor of flash memory, Toshiba had been one of the top 10 in the chip industry until its flash memory unit was spun off as Toshiba Memory, later Kioxia, in the late 2010s.

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