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2SC2412KT146R

ROHM

2SC2412KT146R by ROHM

ROHM 2SC2412KT146R is a NPN BJT transistor with VCEsat of 0.4V, hFE of 180, and fT of 180MHz. Ideal for amplifier applications due to its low power dissipation (0.2W) and high collector-emitter voltage (50V). Features GULL WING terminals in a SMALL OUTLINE package for surface mount assembly.

Median Price

$0.069

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Newark

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Element14

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Chip1Stop

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Verical

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NAC Semi

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Epart123

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Overview

Unleash the power of innovation with the 2SC2412KT146R by ROHM! Crafted with precision and expertise, this Small Signal Bipolar Junction Transistor (BJT) is the perfect choice for amplifier applications. With a maximum VCEsat of 0.4V and a minimum DC current gain of 180, this NPN transistor offers high performance in a compact package. Trust ROHM's reputation for quality and reliability to deliver outstanding results. Elevate your projects to new heights with the 2SC2412KT146R and experience the difference that superior components can make.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good protection and insulation for the transistor, ensuring long-term reliability.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits, making this product suitable for amplifier applications.

Configuration: SINGLE

The single configuration simplifies circuit design and integration, making the product easy to use.

Maximum VCEsat: 0.4 V

Low VCEsat ensures minimal power loss and high efficiency in amplifier circuits.

Surface Mount: YES

Surface mounting capability enables easy and efficient PCB assembly.

Maximum Power Dissipation (Abs): 0.2 W

The low power dissipation helps in reducing heat generation and improving overall reliability.

Minimum DC Current Gain (hFE): 180

High DC current gain ensures proper amplification of signals in different circuits.

Maximum Operating Temperature: 150 °C

The high operating temperature range allows for use in a variety of environments and applications.

Maximum Collector-Base Capacitance: 3.5 pF

Low collector-base capacitance helps in reducing signal distortion and improving overall performance.

Maximum Collector-Emitter Voltage: 50 V

The high collector-emitter voltage rating provides protection against voltage spikes in the circuit.

Nominal Transition Frequency (fT): 180 MHz

High transition frequency allows for high-speed signal processing, making this transistor ideal for high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2SC2412KT146R attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from ROHM

Specs

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

3.5 pF

Maximum Collector-Emitter Voltage:

50 V

Configuration:

Minimum DC Current Gain (hFE):

180

JESD-30 Code:

R-PDSO-G3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

10

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.4 V

Trade Compliance

2SC2412KT146R Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

ROHM

Rohm Co Ltd is a Japan-based company that manufactures and distributes electronic components for use in automotive, transportation, medical, healthcare, audiovisual, telecommunications, digital power, computer and peripherals, and home appliance end markets. Its product portfolio includes integrated circuits in memory, amplifiers, switches, data converters, and microcontrollers; discrete semiconductors, such as transistors and diodes; power devices; passive devices, such as resistors and capacitors; and optoelectronic devices.

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