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2SC2240-GR

Toshiba

2SC2240-GR by Toshiba

The Toshiba 2SC2240-GR is a NPN BJT transistor with max VCEsat of 0.3V, hFE of 200, and max IC of 0.1A. Ideal for amplifier applications due to its high gain and low saturation voltage. Operates at up to 125°C with a max VCE of 120V in a cylindrical package.

Median Price

$6.200

Lifecycle Status

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American Microsemiconductor Inc.

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Overview

Toshiba's 2SC2240-GR Small Signal Bipolar Junction Transistor is a game-changer in the world of amplifiers. With its high DC current gain and low VCEsat, this NPN transistor offers exceptional performance and reliability. Whether you're looking to amplify audio signals or drive small motors, the 2SC2240-GR delivers outstanding results. Trust in Toshiba's reputation for quality and innovation, and experience the value that this versatile transistor brings to your projects. Upgrade your designs with the 2SC2240-GR and take your creations to the next level.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good insulation and protection for the transistor, ensuring reliability and durability.

Polarity or Channel Type: NPN

NPN transistors are commonly used for amplification, making this transistor suitable for amplifier applications.

Configuration: SINGLE

Single configuration simplifies the circuit design and makes it easier to integrate into electronic devices.

Maximum VCEsat: 0.3 V

Low VCEsat helps in reducing power losses and improving efficiency in amplifier circuits.

Package Shape: ROUND

Round package shape allows for efficient heat dissipation and ease of handling during assembly.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide strong mechanical connections, making soldering and assembly easier.

Maximum Power Dissipation (Abs): 0.3 W

With a maximum power dissipation of 0.3 W, this transistor can handle moderate power levels in amplifier circuits.

Package Style (Meter): CYLINDRICAL

Cylindrical package style is compact and space-saving, ideal for small electronic devices.

Minimum DC Current Gain (hFE): 200

High minimum DC current gain ensures stable and consistent amplification performance.

Maximum Operating Temperature: 125 °C

With a maximum operating temperature of 125°C, this transistor can withstand high temperature environments.

Maximum Collector-Emitter Voltage: 120 V

High maximum collector-emitter voltage allows for higher voltage amplification applications.

Transistor Element Material: SILICON

Silicon material offers good performance characteristics such as high conductivity and low leakage.

Maximum Collector Current (IC): 0.1 A

With a maximum collector current of 0.1 A, this transistor can handle moderate current levels in amplifier circuits.

Terminal Finish: Tin/Lead (Sn/Pb)

Tin/Lead terminal finish provides good solderability and ensures reliable electrical connections.

Terminal Position: BOTTOM

Bottom terminal position facilitates easy mounting on PCBs and ensures proper alignment during assembly.

Nominal Transition Frequency (fT): 100 MHz

High nominal transition frequency allows for high-speed signal processing in amplifier circuits.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2SC2240-GR attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Toshiba

Specs

Additional Features:

LOW NOISE

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

120 V

Configuration:

Minimum DC Current Gain (hFE):

200

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

125 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.3 V

Trade Compliance

2SC2240-GR Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Toshiba

TOSHIBA, is a Japanese multinational conglomerate corporation headquartered in Minato, Tokyo, Japan. Its diversified products and services include power, industrial and social infrastructure systems, elevators and escalators, electronic components, semiconductors, hard disk drives (HDD), printers, batteries, lighting, as well as IT solutions such as quantum cryptography which has been in development at Cambridge Research Laboratory, Toshiba Europe, located in the United Kingdom, now being commercialised.It was one of the biggest manufacturers of personal computers, consumer electronics, home appliances, and medical equipment. As a semiconductor company and the inventor of flash memory, Toshiba had been one of the top 10 in the chip industry until its flash memory unit was spun off as Toshiba Memory, later Kioxia, in the late 2010s.

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