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2SC2655

Toshiba

2SC2655 by Toshiba

The Toshiba 2SC2655 is a NPN BJT transistor with max VCEsat of 0.5V, IC of 2A, and hFE of 40. Ideal for switching applications due to its low power dissipation (0.9W) and high transition frequency (100MHz). Its cylindrical package with through-hole terminals makes it suitable for various electronic designs.

Median Price

$1.178

Lifecycle Status

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Nova Conductors

Japan . 30 parts In-Stock

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Component Electronics Inc.

Canada . 18 parts In-Stock

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$2.310

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$1.730

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Electronic Expediters

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Fibra_Brandt Electronic GMBH

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First Choice Components Inc.

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Vyrian

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Prism Electronics

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ECAB

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ACDS - Activité Composants Distribution Service

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MISTER SPROCKETS

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Corel Iberica Componentes, S.L.

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R&J Components

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LittleDiode

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Tech-Mark Corp

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Netroflash

USA . 100 parts In-Stock

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Advanced Electronics

New Zealand . 56 parts In-Stock

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$0.983

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Corohmni

South Africa . 206 parts In-Stock

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AZTECH Wire

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Metaverse IC Inc.

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Continental Prestige Electronics

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Argo Parts USA

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Cyclops Electronics Ltd (Excess)

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RTC Component Inc.

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Overview

Enhance your electronic projects with the high-quality 2SC2655 transistor from Toshiba. As a leading manufacturer in the industry, Toshiba delivers reliable and efficient components for various applications. The 2SC2655 is a versatile NPN transistor ideal for switching circuits, offering a low VCEsat of 0.5V and a maximum collector current of 2A. With a minimum DC current gain of 40 and a nominal transition frequency of 100MHz, this transistor provides excellent performance and value for your projects. Upgrade your designs with the Toshiba 2SC2655 and experience superior results.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and lightweight material, making the transistor easy to handle and resistant to damage.

Polarity or Channel Type: NPN

NPN transistors are widely used and can handle higher currents compared to PNP transistors.

Configuration: SINGLE

Simplifies circuit design and makes the transistor easy to integrate into existing systems.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient performance in such scenarios.

Maximum VCEsat: 0.5 V

Low voltage saturation leads to minimal power loss and high efficiency in operation.

Package Shape: ROUND

Easily fits into circular layouts and can be mounted securely in various orientations.

Terminal Form: THROUGH-HOLE

Facilitates easy soldering onto circuit boards and provides a secure connection for stable operation.

No. of Terminals: 3

Simple and straightforward terminal configuration for easy connection in circuits.

Maximum Power Dissipation (Abs): 0.9 W

Can handle high power dissipation without getting damaged, ensuring reliable performance.

Package Style (Meter): CYLINDRICAL

Compact cylindrical design saves space and allows for efficient placement in constrained environments.

Minimum DC Current Gain (hFE): 40

Good current gain ensures amplification and accurate signal processing in circuits.

Maximum Operating Temperature: 150 °C

Wide operating temperature range allows the transistor to function in varying environmental conditions.

Maximum Collector-Emitter Voltage: 50 V

Can handle relatively high voltage levels, making it suitable for a variety of applications.

Transistor Element Material: SILICON

Silicon material offers high performance, reliability, and compatibility with modern electronic systems.

Maximum Collector Current (IC): 2 A

Capable of handling high currents, making it suitable for power electronics applications.

Terminal Finish: TIN LEAD

Tin lead finish provides good solderability and ensures stable electrical connections over time.

Terminal Position: BOTTOM

Bottom terminal position eases PCB layout and assembly, improving overall circuit design.

Nominal Transition Frequency (fT): 100 MHz

High transition frequency allows for fast switching speeds and efficient performance in high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2SC2655 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Toshiba

Specs

Maximum Collector Current (IC):

2 A

Maximum Collector-Emitter Voltage:

50 V

Configuration:

Minimum DC Current Gain (hFE):

40

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.5 V

Trade Compliance

2SC2655 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Toshiba

TOSHIBA, is a Japanese multinational conglomerate corporation headquartered in Minato, Tokyo, Japan. Its diversified products and services include power, industrial and social infrastructure systems, elevators and escalators, electronic components, semiconductors, hard disk drives (HDD), printers, batteries, lighting, as well as IT solutions such as quantum cryptography which has been in development at Cambridge Research Laboratory, Toshiba Europe, located in the United Kingdom, now being commercialised.It was one of the biggest manufacturers of personal computers, consumer electronics, home appliances, and medical equipment. As a semiconductor company and the inventor of flash memory, Toshiba had been one of the top 10 in the chip industry until its flash memory unit was spun off as Toshiba Memory, later Kioxia, in the late 2010s.

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